2011 International Conference on Simulation of Semiconductor Processes and Devices
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Published By IEEE

9781612844190

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Critical analysis of 14nm device options

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035034 ◽

2011 ◽

Cited By ~ 4

Author(s):

P. Oldiges ◽

R. Muralidhar ◽

P. Kulkarni ◽

C-H. Lin ◽

K. Xiu ◽

...

Keyword(s):

Critical Analysis

High-quality mesh generation based on orthogonal software modules

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035078 ◽

2011 ◽

Cited By ~ 1

Author(s):

Josef Weinbub ◽

Johann Cervenka ◽

Karl Rupp ◽

Siegfried Selberherr

Keyword(s):

Mesh Generation ◽

High Quality ◽

Software Modules

Wigner Monte Carlo approach to quantum and dissipative transport in Si-MOSFETs

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035054 ◽

2011 ◽

Cited By ~ 2

Author(s):

Shunsuke Koba ◽

Hideaki Tsuchiya ◽

Matsuto Ogawa

Keyword(s):

Monte Carlo ◽

Monte Carlo Approach ◽

Dissipative Transport

Correlation between interface traps and random dopants in emerging MOSFETs

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035026 ◽

2011 ◽

Cited By ~ 1

Author(s):

Yung-Yueh Chiu ◽

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Interface Traps ◽

Random Dopants

Impact of energetic disorder and localization on the conductivity and mobility of organic semiconductors

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035084 ◽

2011 ◽

Cited By ~ 1

Author(s):

Fabrizio Torricelli ◽

Luigi Colalongo ◽

Luca Milani ◽

Zsolt Miklos Kovacs-Vajna ◽

Eugenio Cantatore

Keyword(s):

Organic Semiconductors ◽

Energetic Disorder

Analysis of geometrical structure and transport property in InAs/Si heterojunction nanowire tunneling field effect transistors

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6034961 ◽

2011 ◽

Author(s):

Yasuaki Miyoshi ◽

Matsuto Ogawa ◽

Satofumi Souma ◽

Hajime Nakamura

Keyword(s):

Transport Property ◽

Field Effect ◽

Geometrical Structure ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035056 ◽

2011 ◽

Cited By ~ 18

Author(s):

Diego Guerra ◽

David K. Ferry ◽

Sthepen M. Goodnick ◽

Marco Saraniti ◽

Fabio A. Marino

Keyword(s):

Monte Carlo ◽

Millimeter Wave ◽

Device Simulation ◽

Wave Power ◽

Large Signal ◽

Full Band ◽

Gan Hemts ◽

Monte Carlo Device Simulation

Physical circuit-device simulation of ESD and power devices

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035079 ◽

2011 ◽

Author(s):

V. Axelrad ◽

H. Hayashi ◽

I. Kurachi

Keyword(s):

Device Simulation ◽

Power Devices

Inverse modeling of sub-100nm MOSFET with PDE-constrained optimization

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6034965 ◽

2011 ◽

Author(s):

Chen Shen ◽

Ding Gong

Keyword(s):

Constrained Optimization ◽

Inverse Modeling ◽

Pde Constrained Optimization

A mobility model correction for ‘atomistic’ drift-diffusion simulation

2011 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2011.6035023 ◽

2011 ◽

Author(s):

S. M. Amoroso ◽

C. L. Alexander ◽

S. Markov ◽

G. Roy ◽

A. Asenov

Keyword(s):

Mobility Model ◽

Drift Diffusion ◽

Model Correction ◽

Diffusion Simulation

2011 International Conference on Simulation of Semiconductor Processes and DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Critical analysis of 14nm device options

High-quality mesh generation based on orthogonal software modules

Wigner Monte Carlo approach to quantum and dissipative transport in Si-MOSFETs

Correlation between interface traps and random dopants in emerging MOSFETs

Impact of energetic disorder and localization on the conductivity and mobility of organic semiconductors

Analysis of geometrical structure and transport property in InAs/Si heterojunction nanowire tunneling field effect transistors

Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues

Physical circuit-device simulation of ESD and power devices

Inverse modeling of sub-100nm MOSFET with PDE-constrained optimization

A mobility model correction for ‘atomistic’ drift-diffusion simulation

2011 International Conference on Simulation of Semiconductor Processes and Devices
Latest Publications