A 2 GHz 2 mW SiGe BiCMOS frequency divider with new latch-based structure

2003 ◽  
Author(s):  
O. Mazouffre ◽  
J.-B. Begueret ◽  
A. Cathelin ◽  
D. Belot ◽  
Y. Deval
Keyword(s):  
Frequency Divider ◽  
Sige Bicmos

A low power LC-tank SiGe BiCMOS injection locked frequency divider

2009 ◽  
Vol 51 (8) ◽  
pp. 1970-1973 ◽  
Author(s):  
Sheng-Lyang Jang ◽  
Jyun-Yan Wun ◽  
Cheng-Chen Liu ◽  
Miin-Horng Juang
Keyword(s):  
Low Power ◽  
Frequency Divider ◽  
Sige Bicmos ◽  
Lc Tank

Low-power 100 GHz shunt-peaked regenerative frequency divider using 0.18 µm SiGe BiCMOS

2011 ◽  
Vol 47 (14) ◽  
pp. 804-805 ◽  
Author(s):  
A.Y.-K. Chen ◽  
Y.-K. Chen ◽  
J. Lin ◽  
Y. Baeyens
Keyword(s):  
Low Power ◽  
Frequency Divider ◽  
Sige Bicmos

A high-frequency divider in 0.18 µm SiGe BiCMOS technology

2006 ◽  
Author(s):  
Noorfazila Kamal ◽  
Yingbo Zhu ◽  
Leonard T. Hall ◽  
Said F. Al-Sarawi ◽  
Craig Burnet ◽  
...  
Keyword(s):  
High Frequency ◽  
Frequency Divider ◽  
Bicmos Technology ◽  
Sige Bicmos

A 70 GHz static dual-modulus frequency divider in SiGe BiCMOS technology

2015 ◽  
Author(s):  
Arzu Ergintav ◽  
Johannes Borngraber ◽  
Bernd Heinemann ◽  
Holger Rucker ◽  
Frank Herzel ◽  
...  
Keyword(s):  
Frequency Divider ◽  
Bicmos Technology ◽  
Sige Bicmos

scholarly journals An Integrated 5 GHz Wideband Quadrature Modem for OFDM Gbit/s Transmission in SiGe:C BiCMOS

2007 ◽  
Vol 2007 ◽  
pp. 1-8 ◽  
Author(s):  
Klaus Schmalz ◽  
Eckard Grass ◽  
Frank Herzel ◽  
Maxim Piz
Keyword(s):  
Phase Noise ◽  
Signal To Noise Ratio ◽  
Phase Locked Loop ◽  
Frequency Divider ◽  
Signal To Noise ◽  
Ofdm Signal ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
5 Ghz ◽  
Quadrature Signals

This paper presents a 5 GHz wideband I/Q modulator/demodulator for 650 MHz OFDM signal bandwidth, which is integrated with a 5 GHz phase locked loop for I/Q generation. The quadrature signals are derived from a 10 GHz CMOS VCO followed by a bipolar frequency divider. The phase noise at 1 MHz offset is −112 dBc/Hz for the modulator as well as for the demodulator. The chips were produced in a 0.25 μm SiGe BiCMOS technology. The signal-to-noise ratio (SNR) of transmitted/received OFDM signal and the corresponding I/Q mismatch versus baseband frequency are given. The modulator achieves an SNR of 22–23 dB, and the demodulator realizes an SNR up to 22 dB. The modulator reaches a data rate of 2.16 Gbit/s using 64 QAM OFDM, and the demodulator realizes 1.92 Gbits/s.

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