Self-Oscillation Free 0.35 $\mu$m Si/SiGe BiCMOS X-Band Digital Frequency Divider

2008 ◽  
Vol 18 (7) ◽  
pp. 473-475 ◽  
Author(s):  
F. Ducati ◽  
M. Pifferi ◽  
M. Borgarino
Keyword(s):  
Frequency Divider ◽  
Digital Frequency ◽  
X Band ◽  
Sige Bicmos

A low power LC-tank SiGe BiCMOS injection locked frequency divider

2009 ◽  
Vol 51 (8) ◽  
pp. 1970-1973 ◽  
Author(s):  
Sheng-Lyang Jang ◽  
Jyun-Yan Wun ◽  
Cheng-Chen Liu ◽  
Miin-Horng Juang
Keyword(s):  
Low Power ◽  
Frequency Divider ◽  
Sige Bicmos ◽  
Lc Tank

Low-power 100 GHz shunt-peaked regenerative frequency divider using 0.18 µm SiGe BiCMOS

2011 ◽  
Vol 47 (14) ◽  
pp. 804-805 ◽  
Author(s):  
A.Y.-K. Chen ◽  
Y.-K. Chen ◽  
J. Lin ◽  
Y. Baeyens
Keyword(s):  
Low Power ◽  
Frequency Divider ◽  
Sige Bicmos

scholarly journals An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

2016 ◽  
Vol 9 (5) ◽  
pp. 965-976
Author(s):  
Rasmus S. Michaelsen ◽  
Tom K. Johansen ◽  
Kjeld M. Tamborg ◽  
Vitaliy Zhurbenko ◽  
Lei Yan
Keyword(s):  
Power Level ◽  
Schottky Diodes ◽  
Local Oscillator ◽  
Critical Parameters ◽  
Center Frequency ◽  
X Band ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Marchand Balun ◽  
Balanced Mixer

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.

scholarly journals An RF-MEMS-Based Digitally Tunable SIW Filter in X-Band for Communication Satellite Applications

2019 ◽  
Vol 9 (9) ◽  
pp. 1838 ◽  
Author(s):  
Abbas El Mostrah ◽  
Andrei Muller ◽  
Jean-François Favennec ◽  
Benjamin Potelon ◽  
Alexandre Manchec ◽  
...  
Keyword(s):  
Tuning Range ◽  
Rf Mems ◽  
Frequency Control ◽  
Frequency Range ◽  
Digital Frequency ◽  
X Band ◽  
Satellite Applications ◽  
Waveguide Filter ◽  
Functional States ◽  
Commercial Off The Shelf

This paper presents a digitally tunable SIW (substrate integrated waveguide) filter designed for X-band, based on RF-MEMS (radio frequency micro-electrical-mechanical systems) technology. Four commercial off-the-shelf RF-MEMS single-pole single-throw (SPST) switches were directly mounted on the upper surface of the filter, with metallic tuning posts specifically located within each cavity to define the potential achievable frequency range. Fabricated on standard alumina substrate, the design of the filter and the biasing network enabled fine digital frequency control of up to four functional states by the inclusion of wire bondings between each switch and the substrate. A relative tuning range of 2.3% was achieved between the lower and upper discrete states of 2.76% and 2.89% in the 3 dB fractional bandwidths.

Digital power factor meter based on digital frequency divider

1988 ◽  
Vol 65 (1) ◽  
pp. 111-116 ◽  
Author(s):  
KADHIM N. KADHIM ◽  
MAJID A. H. ABDUL-KARIM
Keyword(s):  
Power Factor ◽  
Frequency Divider ◽  
Digital Frequency
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