An adaptive ferroelectric transformer—A solid-state analog memory device

1970 ◽  
Vol 17 (7) ◽  
pp. 534-540 ◽  
Author(s):  
J.H. McCusker ◽  
S.S. Perlman
Keyword(s):  
Solid State ◽  
Memory Device ◽  
Analog Memory

A floating-gate analog memory device for neural networks

1993 ◽  
Vol 40 (11) ◽  
pp. 2029-2035 ◽  
Author(s):  
O. Fujita ◽  
Y. Amemiya
Keyword(s):  
Neural Networks ◽  
Memory Device ◽  
Floating Gate ◽  
Analog Memory

Phase-change memory device fabricated using solid-state alloying

2010 ◽  
Vol 46 (9) ◽  
pp. 652 ◽  
Author(s):  
S.-Y. Lee ◽  
Y.S. Park ◽  
S.-M. Yoon ◽  
S.-W. Jung ◽  
B.-G. Yu
Keyword(s):  
Solid State ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Device ◽  
Change Memory

scholarly journals Soft and flexible: core-shell ionic liquid resistive memory for electronic synapses

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Muhammad Umair Khan ◽  
Qazi Muhammad Saqib ◽  
Mahesh Y. Chougale ◽  
Rayyan Ali Shaukat ◽  
Jungmin Kim ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Solid State ◽  
Human Brain ◽  
Intelligent System ◽  
Memory Device ◽  
Switching Behavior ◽  
Core Shell ◽  
Resistive Memory ◽  
Ion Concentration Polarization ◽  
Solid State Materials

AbstractThe human brain is the most efficient computational and intelligent system, and researchers are trying to mimic the human brain using solid-state materials. However, the use of solid-state materials has a limitation due to the movement of neurotransmitters. Hence, soft memory devices are receiving tremendous attention for smooth neurotransmission due to the ion concentration polarization mechanism. This paper proposes a core-shell soft ionic liquid (IL)-resistive memory device for electronic synapses using Cu/Ag@AgCl/Cu with multistate resistive behavior. The presence of the Ag@AgCl core shell in the liquid electrolyte significantly helps to control the movement of Cu2+ ions, which results in multistate resistive switching behavior. The core-shell IL soft memory device can open a gateway for electronic synapses.

scholarly journals Low-Energy-Consumption Three-Valued Memory Device Inspired by Solid-State Batteries

2019 ◽  
Vol 11 (48) ◽  
pp. 45150-45154 ◽  
Author(s):  
Yuki Watanabe ◽  
Shigeru Kobayashi ◽  
Issei Sugiyama ◽  
Kazunori Nishio ◽  
Wei Liu ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Solid State ◽  
Memory Device ◽  
Low Energy ◽  
Low Energy Consumption ◽  
Solid State Batteries
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