IIIA-5 spatial light modulators using charge-coupled device addressing and electroabsorption effects in multiple quantum wells

1987 ◽  
Vol 34 (11) ◽  
pp. 2363-2364
Author(s):  
K.B. Nichols ◽  
B.E. Burke ◽  
B.F. Aull ◽  
W.D. Goodhue ◽  
B.F. Gramstorff ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Spatial Light Modulators ◽  
Multiple Quantum ◽  
Charge Coupled Device ◽  
Light Modulators

Spatial light modulators using charge‐coupled‐device addressing and electroabsorption effects in GaAs/AlGaAs multiple quantum wells

1988 ◽  
Vol 52 (14) ◽  
pp. 1116-1118 ◽  
Author(s):  
K. B. Nichols ◽  
B. E. Burke ◽  
B. F. Aull ◽  
W. D. Goodhue ◽  
B. F. Gramstorff ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Spatial Light Modulators ◽  
Multiple Quantum ◽  
Charge Coupled Device ◽  
Light Modulators

High‐resolution spatial light modulators using GaAs/AlGaAs multiple quantum wells

1994 ◽  
Vol 65 (8) ◽  
pp. 956-958 ◽  
Author(s):  
S. R. Bowman ◽  
W. S. Rabinovich ◽  
C. S. Kyono ◽  
D. S. Katzer ◽  
K. Ikossi‐Anastasiou
Keyword(s):  
High Resolution ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Spatial Light Modulators ◽  
Multiple Quantum ◽  
Light Modulators

Strained InGaAs/GaAs Multiple Quantum Wells Grown on Planar and Pre-Patterned GaAs(100) Substrates VIA Molecular Beam Epitaxy: Applications to Light Modulators and Detectors

1991 ◽  
Vol 228 ◽  
Author(s):  
Li Chen ◽  
Kezhong Hu ◽  
K. C. Rajkumar ◽  
S. Guhae ◽  
R. Kapre ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Contrast Ratio ◽  
Growth Conditions ◽  
Optical Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Mbe Growth ◽  
Light Modulators ◽  
Transmission Electron

ABSTRACTWe report the realization of high quality strained InGaAs/GaAs multiple quantum wells (MQW) grown on planar GaAs (100) substrates through optimization of molecular beam epitaxical (MBE) growth conditions and structure. Such MQWs containing ∼ 11% In have lead to the realization of an asymmetric Fabry-Perot (ASFP) reflection modulator with a room temperature contrast ratio of 66:1 and an on-state reflectivity of 30%. For In composition ≥ 0.2, the improved optical quality for very thick (gt;2μm) InGaAs/GaAs MQWs grown on pre-patterned substrates is demonstrated via transmission electron microscopy (TEM) and micro-absorption measurements.

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study
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