Strained InGaAs/GaAs Multiple Quantum Wells Grown on Planar and Pre-Patterned GaAs(100) Substrates VIA Molecular Beam Epitaxy: Applications to Light Modulators and Detectors

1991 ◽  
Vol 228 ◽  
Author(s):  
Li Chen ◽  
Kezhong Hu ◽  
K. C. Rajkumar ◽  
S. Guhae ◽  
R. Kapre ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Contrast Ratio ◽  
Growth Conditions ◽  
Optical Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Mbe Growth ◽  
Light Modulators ◽  
Transmission Electron

ABSTRACTWe report the realization of high quality strained InGaAs/GaAs multiple quantum wells (MQW) grown on planar GaAs (100) substrates through optimization of molecular beam epitaxical (MBE) growth conditions and structure. Such MQWs containing ∼ 11% In have lead to the realization of an asymmetric Fabry-Perot (ASFP) reflection modulator with a room temperature contrast ratio of 66:1 and an on-state reflectivity of 30%. For In composition ≥ 0.2, the improved optical quality for very thick (gt;2μm) InGaAs/GaAs MQWs grown on pre-patterned substrates is demonstrated via transmission electron microscopy (TEM) and micro-absorption measurements.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Spatial light modulators using charge‐coupled‐device addressing and electroabsorption effects in GaAs/AlGaAs multiple quantum wells

1988 ◽  
Vol 52 (14) ◽  
pp. 1116-1118 ◽  
Author(s):  
K. B. Nichols ◽  
B. E. Burke ◽  
B. F. Aull ◽  
W. D. Goodhue ◽  
B. F. Gramstorff ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Spatial Light Modulators ◽  
Multiple Quantum ◽  
Charge Coupled Device ◽  
Light Modulators

Structure of CdTe‐Cd1−xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxy

1989 ◽  
Vol 55 (13) ◽  
pp. 1303-1305 ◽  
Author(s):  
G. M. Williams ◽  
A. G. Cullis ◽  
C. R. Whitehouse ◽  
D. E. Ashenford ◽  
B. Lunn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3

2018 ◽  
Vol 11 (9) ◽  
pp. 091003 ◽  
Author(s):  
Valentin N. Jmerik ◽  
Dmitrii V. Nechaev ◽  
Alexey A. Toropov ◽  
Evgenii A. Evropeitsev ◽  
Vladimir I. Kozlovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
High Efficiency ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

2020 ◽  
Vol 709 ◽  
pp. 138216
Author(s):  
Chirantan Singha ◽  
Sayantani Sen ◽  
Alakananda Das ◽  
Anirban Saha ◽  
Pallabi Pramanik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Kinetics ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Efficiency

Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

2015 ◽  
Vol 107 (26) ◽  
pp. 262102 ◽  
Author(s):  
F. Oliveira ◽  
I. A. Fischer ◽  
A. Benedetti ◽  
P. Zaumseil ◽  
M. F. Cerqueira ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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