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High‐resolution spatial light modulators using GaAs/AlGaAs multiple quantum wells
Applied Physics Letters
◽
10.1063/1.112160
◽
1994
◽
Vol 65
(8)
◽
pp. 956-958
◽
Cited By ~ 23
Author(s):
S. R. Bowman
◽
W. S. Rabinovich
◽
C. S. Kyono
◽
D. S. Katzer
◽
K. Ikossi‐Anastasiou
Keyword(s):
High Resolution
◽
Quantum Wells
◽
Multiple Quantum Wells
◽
Spatial Light Modulators
◽
Multiple Quantum
◽
Light Modulators
Download Full-text
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References
Spatial light modulators using charge‐coupled‐device addressing and electroabsorption effects in GaAs/AlGaAs multiple quantum wells
Applied Physics Letters
◽
10.1063/1.99179
◽
1988
◽
Vol 52
(14)
◽
pp. 1116-1118
◽
Cited By ~ 5
Author(s):
K. B. Nichols
◽
B. E. Burke
◽
B. F. Aull
◽
W. D. Goodhue
◽
B. F. Gramstorff
◽
...
Keyword(s):
Quantum Wells
◽
Multiple Quantum Wells
◽
Spatial Light Modulators
◽
Multiple Quantum
◽
Charge Coupled Device
◽
Light Modulators
Download Full-text
CCD Spatial Light Modulators using Electroabsorption Effects in Multiple Quantum Wells
10.1117/12.960399
◽
1986
◽
Cited By ~ 1
Author(s):
B. E. Burke
◽
W. D. Goodhue
◽
K. B. Nichols
Keyword(s):
Quantum Wells
◽
Multiple Quantum Wells
◽
Spatial Light Modulators
◽
Multiple Quantum
◽
Light Modulators
Download Full-text
Multiple quantum wells spatial light modulators for correlation based processors
10.1117/12.449678
◽
2001
◽
Author(s):
Bertrand Noharet
◽
Stephane Junique
Keyword(s):
Quantum Wells
◽
Multiple Quantum Wells
◽
Spatial Light Modulators
◽
Multiple Quantum
◽
Light Modulators
Download Full-text
Birefringence in strained multiple quantum wells for high-contrast spatial light modulators (SLMs)
10.1117/12.284205
◽
1997
◽
Author(s):
Hui Wang
◽
Wenli Huang
◽
Faquir C. Jain
Keyword(s):
Quantum Wells
◽
Multiple Quantum Wells
◽
Spatial Light Modulators
◽
Multiple Quantum
◽
High Contrast
◽
Light Modulators
Download Full-text
Spatial light modulators based on semi-insulating multiple quantum wells
Proceedings of LEOS '93
◽
10.1109/leos.1993.379037
◽
2002
◽
Author(s):
A. Partovi
Keyword(s):
Quantum Wells
◽
Multiple Quantum Wells
◽
Spatial Light Modulators
◽
Multiple Quantum
◽
Light Modulators
Download Full-text
IIIA-5 spatial light modulators using charge-coupled device addressing and electroabsorption effects in multiple quantum wells
IEEE Transactions on Electron Devices
◽
10.1109/t-ed.1987.23264
◽
1987
◽
Vol 34
(11)
◽
pp. 2363-2364
Author(s):
K.B. Nichols
◽
B.E. Burke
◽
B.F. Aull
◽
W.D. Goodhue
◽
B.F. Gramstorff
◽
...
Keyword(s):
Quantum Wells
◽
Multiple Quantum Wells
◽
Spatial Light Modulators
◽
Multiple Quantum
◽
Charge Coupled Device
◽
Light Modulators
Download Full-text
Characterization of (In,Ga)As/GaAs strained-layer multiple quantum wells with high-resolution X-ray diffraction and computer simulations
Applied Surface Science
◽
10.1016/0169-4332(91)90144-9
◽
1991
◽
Vol 50
(1-4)
◽
pp. 92-96
◽
Cited By ~ 6
Author(s):
R. Zaus
◽
M. Schuster
◽
H. Göbel
◽
J.-P. Reithmaier
Keyword(s):
High Resolution
◽
Quantum Wells
◽
Computer Simulations
◽
Multiple Quantum Wells
◽
Multiple Quantum
◽
X Ray Diffraction
◽
X Ray
◽
Strained Layer
Download Full-text
Microarea Strain Analysis in InGaN/GaN Multiple Quantum Wells onm-Plane Using High-Resolution Microbeam X-ray Diffraction
Japanese Journal of Applied Physics
◽
10.7567/jjap.52.071001
◽
2013
◽
Vol 52
(7R)
◽
pp. 071001
Author(s):
Shunji Yoshida
◽
Toshiya Yokogawa
◽
Yasuhiko Imai
◽
Shigeru Kimura
Keyword(s):
High Resolution
◽
Quantum Wells
◽
Strain Analysis
◽
Multiple Quantum Wells
◽
Multiple Quantum
◽
X Ray Diffraction
◽
X Ray
Download Full-text
Strain relaxation onset in multiple-quantum wells investigated by high-resolution X-ray diffraction and atomic force microscopy
Applied Surface Science
◽
10.1016/s0169-4332(96)01090-2
◽
1997
◽
Vol 115
(3)
◽
pp. 211-216
◽
Cited By ~ 2
Author(s):
C Giannini
◽
M.F De Riccardis
◽
A Passaseo
◽
L Tapfer
◽
T Peluso
Keyword(s):
Atomic Force Microscopy
◽
High Resolution
◽
Quantum Wells
◽
Strain Relaxation
◽
Multiple Quantum Wells
◽
Multiple Quantum
◽
X Ray Diffraction
◽
X Ray
◽
Force Microscopy
◽
Atomic Force
Download Full-text
High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration
Journal of Applied Physics
◽
10.1063/1.369620
◽
1999
◽
Vol 85
(5)
◽
pp. 3006-3008
◽
Cited By ~ 35
Author(s):
Yong-Hoon Cho
◽
F. Fedler
◽
R. J. Hauenstein
◽
G. H. Park
◽
J. J. Song
◽
...
Keyword(s):
High Resolution
◽
Quantum Wells
◽
Doping Concentration
◽
Multiple Quantum Wells
◽
Multiple Quantum
◽
X Ray
◽
Si Doping
Download Full-text
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