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Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping
IEEE Transactions on Electron Devices
◽
10.1109/ted.2018.2878727
◽
2019
◽
Vol 66
(1)
◽
pp. 478-484
◽
Cited By ~ 15
Author(s):
Hongchang Tao
◽
Shengrui Xu
◽
Jincheng Zhang
◽
Peixian Li
◽
Zhiyu Lin
◽
...
Keyword(s):
Numerical Investigation
◽
Ultraviolet Light
◽
Light Emitting Diodes
◽
Light Emitting
◽
P Type
◽
Ultraviolet Light Emitting Diodes
Download Full-text
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References
Ultraviolet light-emitting diodes with polarization-doped p-type layer
Superlattices and Microstructures
◽
10.1016/j.spmi.2016.06.016
◽
2016
◽
Vol 97
◽
pp. 353-357
◽
Cited By ~ 3
Author(s):
Wenxiao Hu
◽
Ping Qin
◽
Weidong Song
◽
Chongzhen Zhang
◽
Rupeng Wang
◽
...
Keyword(s):
Ultraviolet Light
◽
Light Emitting Diodes
◽
Light Emitting
◽
Type Layer
◽
P Type
◽
Ultraviolet Light Emitting Diodes
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Fabrication of p-type ZnO nanorods/n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method
physica status solidi (a)
◽
10.1002/pssa.201228643
◽
2013
◽
Vol 210
(8)
◽
pp. 1618-1623
◽
Cited By ~ 7
Author(s):
Nguyen Xuan Sang
◽
Tay Chuan Beng
◽
Tang Jie
◽
Eugene A. Fitzgerald
◽
Chua Soo Jin
Keyword(s):
Aqueous Solution
◽
Ultraviolet Light
◽
Solution Method
◽
Light Emitting Diodes
◽
Zno Nanorods
◽
Light Emitting
◽
P Type
◽
Ultraviolet Light Emitting Diodes
◽
Gan Film
◽
Aqueous Solution Method
Download Full-text
Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency
Nanoscale Research Letters
◽
10.1186/s11671-018-2539-9
◽
2018
◽
Vol 13
(1)
◽
Cited By ~ 19
Author(s):
Zi-Hui Zhang
◽
Sung-Wen Huang Chen
◽
Chunshuang Chu
◽
Kangkai Tian
◽
Mengqian Fang
◽
...
Keyword(s):
Ultraviolet Light
◽
Light Emitting Diodes
◽
Efficiency Droop
◽
Blocking Layer
◽
Electron Blocking Layer
◽
Light Emitting
◽
Mg Doping
◽
P Type
◽
Ultraviolet Light Emitting Diodes
Download Full-text
Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
Optical Materials Express
◽
10.1364/ome.380409
◽
2020
◽
Vol 10
(2)
◽
pp. 472
◽
Cited By ~ 4
Author(s):
Ravi Teja Velpula
◽
Barsha Jain
◽
Ha Quoc Thang Bui
◽
Tan Thi Pham
◽
Van Thang Le
◽
...
Keyword(s):
Numerical Investigation
◽
Ultraviolet Light
◽
Light Emitting Diodes
◽
Device Performance
◽
Blocking Layer
◽
Electron Blocking Layer
◽
Light Emitting
◽
Deep Ultraviolet
◽
Ultraviolet Light Emitting Diodes
Download Full-text
Enhancement of hole injection in deep ultraviolet light-emitting diodes using a serrated P-type layer
Optics Communications
◽
10.1016/j.optcom.2018.10.024
◽
2019
◽
Vol 433
◽
pp. 236-241
◽
Cited By ~ 10
Author(s):
Yufei Hou
◽
Zhiyou Guo
Keyword(s):
Ultraviolet Light
◽
Light Emitting Diodes
◽
Hole Injection
◽
Light Emitting
◽
Type Layer
◽
Deep Ultraviolet
◽
P Type
◽
Ultraviolet Light Emitting Diodes
Download Full-text
High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes
Applied Physics Letters
◽
10.1063/1.1805199
◽
2004
◽
Vol 85
(14)
◽
pp. 2797-2799
◽
Cited By ~ 13
Author(s):
Guan-Ting Chen
◽
Chang-Chi Pan
◽
Chi-Shin Fang
◽
Tzu-Chien Huang
◽
Jen-Inn Chyi
◽
...
Keyword(s):
Ultraviolet Light
◽
Ohmic Contacts
◽
Light Emitting Diodes
◽
Light Emitting
◽
High Reflectivity
◽
P Type
◽
Ultraviolet Light Emitting Diodes
Download Full-text
Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier
IEEE Photonics Journal
◽
10.1109/jphot.2014.2387253
◽
2015
◽
Vol 7
(1)
◽
pp. 1-10
◽
Cited By ~ 26
Author(s):
Xianglong Bao
◽
Pai Sun
◽
Songqing Liu
◽
Chunya Ye
◽
Shuping Li
◽
...
Keyword(s):
Ultraviolet Light
◽
Light Emitting Diodes
◽
Light Emitting
◽
Performance Improvements
◽
Deep Ultraviolet
◽
P Type
◽
Ultraviolet Light Emitting Diodes
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High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient
physica status solidi (a)
◽
10.1002/pssa.200983448
◽
2010
◽
Vol 207
(6)
◽
pp. 1393-1396
◽
Cited By ~ 1
Author(s):
Kengo Nagata
◽
Tomoki Ichikawa
◽
Kenichiro Takeda
◽
Kentaro Nagamatsu
◽
Motoaki Iwaya
◽
...
Keyword(s):
Ultraviolet Light
◽
Output Power
◽
Light Emitting Diodes
◽
High Output Power
◽
Light Emitting
◽
P Type
◽
Ultraviolet Light Emitting Diodes
◽
High Output
◽
Mg Doped
Download Full-text
Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes
2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR)
◽
10.1109/cleopr.2013.6600210
◽
2013
◽
Author(s):
Han-Youl Ryu
◽
Il-Gyun Choi
◽
Hyo-Sik Choi
◽
Jong-In Shim
Keyword(s):
Numerical Investigation
◽
Ultraviolet Light
◽
Light Emitting Diodes
◽
Extraction Efficiency
◽
Light Extraction
◽
Light Extraction Efficiency
◽
Light Emitting
◽
Deep Ultraviolet
◽
Ultraviolet Light Emitting Diodes
Download Full-text
Increasing the carrier injection efficiency of GaN-based ultraviolet light-emitting diodes by double Al composition gradient last quantum barrier and p-type hole supply layer
IEEE Photonics Journal
◽
10.1109/jphot.2021.3058651
◽
2021
◽
pp. 1-1
Author(s):
Jinxing Wu
◽
Peixian Li
◽
Xiaowei Zhou
◽
Jiangtao Wu
◽
Yue Hao
Keyword(s):
Ultraviolet Light
◽
Light Emitting Diodes
◽
Composition Gradient
◽
Carrier Injection
◽
Injection Efficiency
◽
Light Emitting
◽
P Type
◽
Ultraviolet Light Emitting Diodes
Download Full-text
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