Perpendicular Magnetic Anisotropy of Co2FexMn1−xSi Heusler Alloy Ultra-Thin Films

2014 ◽  
Vol 50 (11) ◽  
pp. 1-4 ◽  
Author(s):  
Tomonari Kamada ◽  
Takahide Kubota ◽  
Shigeki Takahashi ◽  
Yoshiaki Sonobe ◽  
Koki Takanashi



ChemInform ◽  
2016 ◽  
Vol 47 (38) ◽  
Author(s):  
Y. Wu ◽  
X. G. Xu ◽  
J. Miao ◽  
Y. Jiang


SPIN ◽  
2015 ◽  
Vol 05 (04) ◽  
pp. 1540012 ◽  
Author(s):  
Y. Wu ◽  
X. G. Xu ◽  
J. Miao ◽  
Y. Jiang

Half-metallic Co-based full Heusler alloys have been qualified as promising functional materials in spintronic devices due to their high spin polarization. The lack of perpendicular magnetic anisotropy (PMA) is one of the biggest obstacles restricting their application in next generation ultrahigh density storage such as magnetic random access memory (MARM). How to induce the PMA in Co-based full Heusler alloy thin films has attracted much research interest of scientists. This paper presents an overview of recent progress in this research area. We hope that this paper would provide some guidance and ideas to develop highly spin-polarized Co-based Heusler alloy thin films with PMA.



AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025106
Author(s):  
Xinjun Wang ◽  
Sergiy Krylyuk ◽  
Daniel Josell ◽  
Delin Zhang ◽  
Deyuan Lyu ◽  
...  


RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11219-11224
Author(s):  
Wei Zhang ◽  
Xiaoxiong Jia ◽  
Rui Wang ◽  
Huihui Liu ◽  
Zhengyu Xiao ◽  
...  

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.



Author(s):  
Wenbiao Zhang ◽  
Kequn Chi ◽  
Xiang Feng ◽  
Yinuo Shi ◽  
Zhou Li ◽  
...  


1993 ◽  
Vol 126 (1-3) ◽  
pp. 577-579 ◽  
Author(s):  
B.M. Lairson ◽  
M.R. Visokay ◽  
R. Sinclair ◽  
B.M. Clemens


Author(s):  
G.A. Ramírez ◽  
A. Moya-Riffo ◽  
D. Goijman ◽  
J.E. Gómez ◽  
F. Malamud ◽  
...  


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Lordan ◽  
Guannan Wei ◽  
Paul McCloskey ◽  
Cian O’Mathuna ◽  
Ansar Masood

AbstractThe emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.



1995 ◽  
Vol 19 (S_1_MORIS_94) ◽  
pp. S1_229-232
Author(s):  
Y. TAKENO ◽  
K. KANEKO ◽  
Y. SHIMADA


Sign in / Sign up

Export Citation Format

Share Document