A Simple Model for Capture and Emission Time Constants of Random Telegraph Signal Noise

2011 ◽  
Vol 10 (6) ◽  
pp. 1352-1356 ◽  
Author(s):  
Younghwan Son ◽  
Taewook Kang ◽  
Sunyoung Park ◽  
Hyungcheol Shin
Keyword(s):  
Simple Model ◽  
Time Constants ◽  
Random Telegraph Signal ◽  
Signal Noise ◽  
Emission Time

TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING

2004 ◽  
Vol 14 (03) ◽  
pp. 769-774
Author(s):  
HYEONGNAM KIM ◽  
JAESUN LEE ◽  
WU LU
Keyword(s):  
Time Constant ◽  
High Mobility ◽  
Time Constants ◽  
Emission Time ◽  
Annealing Effects ◽  
Drain Bias ◽  
Gan Hemts ◽  
Electron Transistors ◽  
Shallow Traps ◽  
Transient Measurements

Trapping effects are investigated to examine the post-gate annealing effects on AlGaN/GaN high-mobility electron transistors (HEMTs) using pulsed I-V and transient measurements. In the unannealed devices, shallow traps are identified, which have an activation of 38 meV at a drain bias of 7 V. The time constant of these traps is determined to be ~0.5 μs. Devices annealed at 400°C for 10 minutes have a significantly smaller number of traps. However, a small number of traps with a longer time constant of 9.2 μs are created or activated during post-gate annealing. 20-minute annealing at 400°C leads to the increase of the number of traps with emission time constants of 21.6 μs and 1.25 ms. The breakdown voltage improvement by post-gate annealing is attributed to the removal or significant reduction of the shallow level traps.

Impact of Channel Doping Concentration on Random Telegraph Signal Noise

2009 ◽  
Author(s):  
K. Abe ◽  
A. Teramoto ◽  
S. Watabe ◽  
T. Fujisawa ◽  
S. Sugawa ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Random Telegraph Signal ◽  
Signal Noise
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