The effects of chemical etching on the charge collection efficiency of {111} oriented Cd/sub 0.9/Zn/sub 0.1/Te nuclear radiation detectors

2002 ◽  
Vol 49 (5) ◽  
pp. 2521-2525 ◽  
Author(s):  
G. Wright ◽  
Y. Cui ◽  
U.N. Roy ◽  
C. Barnett ◽  
K. Reed ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Collection Efficiency ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Nuclear Radiation Detectors

Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 °C

2009 ◽  
Vol 615-617 ◽  
pp. 853-856
Author(s):  
Alexander M. Ivanov ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski
Keyword(s):  
Collection Efficiency ◽  
Amplitude Spectrum ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Charge Collection Efficiency ◽  
Radiation Induced ◽  
Two Stages ◽  
Nuclear Detectors ◽  
Nuclear Radiation Detectors ◽  
Induced Defects

The effect of a cycle "introduction of defects – annealing – introduction of defects" on the SiC properties has been studied to know the degradation of characteristics of p-n- nuclear radiation detectors. The irradiation with 8 МeV protons at fluences of about 3×1014 сm-2 was used. The annealing was carried out in two stages one-hour at temperatures of 600 and 700 °С. Nuclear spectrometric techniques with 5.8 MeV -particles were employed to test the detectors. The charge collection efficiency and features of the amplitude spectrum were determined to study the capture of charge carriers by radiation-induced defects. Measurements were made in the temperature range of 20–250 °С. It is shown that at 250 °С there is a decrease in the carriers capture. The form of the amplitude spectrum essentially improves. The first irradiation and the subsequent annealing do not change significantly the radiation hardness of SiC. During the second irradiation the effective concentration of the introduced centers is 1.3 times higher. This result may be due to the high total fluence of protons, 6×1014 cm-2.

Comparative Studies of Ionizing Radiation Detectors Made on the Basis of Various Types of Diamond Plates

2021 ◽  
Vol 23 (2) ◽  
pp. 68-75
Author(s):  
Altukhov A.A. ◽  
Keyword(s):  
Ionizing Radiation ◽  
Single Crystal ◽  
Comparative Studies ◽  
Collection Efficiency ◽  
Radiation Detectors ◽  
Charge Collection ◽  
Alpha Radiation ◽  
Charge Collection Efficiency ◽  
Polarization Phenomena

The results of experiments on the study of polarization phenomena and the charge collection efficiency in test structures of diamond ionizing radiation detectors using diamond plates of various types, including single-crystal NRNT-type, single-crystal CVD-type, as well as polycrystalline type, when exposed to alpha-radiation with an energy of 5.5 MeV are presented. Studies have demonstrated the existence of a number of problems with the device quality of diamond plates that affect the performance of spec-trometric-type detectors.

Study of the charge collection efficiency of CdZnTe radiation detectors

1996 ◽  
Vol 25 (8) ◽  
pp. 1221-1231 ◽  
Author(s):  
Y. Nemirovsky ◽  
A. Ruzin ◽  
G. Asa ◽  
J. Gorelik
Keyword(s):  
Collection Efficiency ◽  
Radiation Detectors ◽  
Charge Collection ◽  
Charge Collection Efficiency

Investigation of the Charge Collection Efficiency of CdMnTe Radiation Detectors

2012 ◽  
Vol 59 (3) ◽  
pp. 634-641 ◽  
Author(s):  
R. Rafiei ◽  
D. Boardman ◽  
A. Sarbutt ◽  
D. A. Prokopovich ◽  
K. Kim ◽  
...  
Keyword(s):  
Collection Efficiency ◽  
Radiation Detectors ◽  
Charge Collection ◽  
Charge Collection Efficiency

Studies of Charge Collection in GaAs Radiation Detectors

1993 ◽  
Vol 302 ◽  
Author(s):  
K Berwick ◽  
M R Brozel ◽  
C M Butiar ◽  
M Cowperthwaite ◽  
Y Hou
Keyword(s):  
Electric Field ◽  
Collection Efficiency ◽  
Radiation Detectors ◽  
Alpha Particles ◽  
Uniform Electric Field ◽  
Charge Collection ◽  
Applied Bias ◽  
Particle Detectors ◽  
Charge Collection Efficiency ◽  
Lec Gaas

ABSTRACTThe behaviour of the charge collection efficiency of particle detectors fabricated from Semi-Insulating (SI) Liquid Encapsulated Czochralski (LEC) GaAs as a function of applied bias is investigated for alpha particles and it is shown that it cannot be explained by simple models that assume a uniform electric field across the detector. To investigate this the electric field within the SI GaAs has been studied. We have attempted to correlate the measured charge collection efficiency with the observed field distributions. Some correlation is found but other effects may also be present.

scholarly journals EFFECT OF DEFECTS ORIGINATING UNDER THE PROTON IRRADIATION ON THE ELECTROPHYSICAL AND DETECTOR PROPERTIES OF CdTe:Cl AND CdZnTe

2021 ◽  
pp. 43-50
Author(s):  
A.I. Kondrik
Keyword(s):  
Proton Irradiation ◽  
Collection Efficiency ◽  
Energy Levels ◽  
Radiation Detectors ◽  
High Energy ◽  
Charge Collection ◽  
Radiation Defects ◽  
Initial State ◽  
Charge Collection Efficiency ◽  
Factors Affecting

The work is dedicated to studying by computer modeling the mechanisms of the influence of radiation defects, originating under high energy proton irradiation, on the resistivity ρ, lifetime of nonequilibrium electrons n and holes p in CdTe:Cl and Cd0.9Zn0.1Te, and charge collection efficiency η of room temperature ionizing radiation detectors based on these materials. The effect of recombination at deep levels of radiation defects on the degradation of n, p, and  of detectors based on CdTe:Cl and Cd0.9Zn0.1Te was studied. Energy levels of radiation defects also substantially effect on compensation degree of semiconductor decreasing ρ. The main factors affecting the abrupt or gradual decrease in the resistivity and charge collection efficiency of these detectors during their bombardment by high-energy protons, leading to complete degradation of their recording ability, were found. The important role of purity and deep donor concentration in initial state of the detector material was indicated.

Matrix Nuclear Radiation GaAs Detectors Simulation

2016 ◽  
Vol 845 ◽  
pp. 154-157
Author(s):  
Eketerina Tokareva ◽  
Gennadiy Koltsov ◽  
Nurnaz Burtebaev ◽  
Sergey Didenko ◽  
Sergey Legotin ◽  
...  
Keyword(s):  
Electric Fields ◽  
Energy Resolution ◽  
Collection Efficiency ◽  
Structure Optimization ◽  
Computer Programs ◽  
Nuclear Radiation ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Detector Structure ◽  
Matrix Detector

Using computer programs Elmer FEM Solver for calculating electric fields and Geant4 for the passage simulation of particles through matter, calculations of charge collection efficiency for nuclear radiation matrix detector based on GaAs p-i-n diodes with different distances between pixels 110 microns and 50 microns were made. Based on data obtained detector structure optimization solution, which improves energy resolution, is proposed.

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