Investigation of the Charge Collection Efficiency of CdMnTe Radiation Detectors

2012 ◽  
Vol 59 (3) ◽  
pp. 634-641 ◽  
Author(s):  
R. Rafiei ◽  
D. Boardman ◽  
A. Sarbutt ◽  
D. A. Prokopovich ◽  
K. Kim ◽  
...  
2021 ◽  
Vol 23 (2) ◽  
pp. 68-75
Author(s):  
Altukhov A.A. ◽  

The results of experiments on the study of polarization phenomena and the charge collection efficiency in test structures of diamond ionizing radiation detectors using diamond plates of various types, including single-crystal NRNT-type, single-crystal CVD-type, as well as polycrystalline type, when exposed to alpha-radiation with an energy of 5.5 MeV are presented. Studies have demonstrated the existence of a number of problems with the device quality of diamond plates that affect the performance of spec-trometric-type detectors.


1996 ◽  
Vol 25 (8) ◽  
pp. 1221-1231 ◽  
Author(s):  
Y. Nemirovsky ◽  
A. Ruzin ◽  
G. Asa ◽  
J. Gorelik

1993 ◽  
Vol 302 ◽  
Author(s):  
K Berwick ◽  
M R Brozel ◽  
C M Butiar ◽  
M Cowperthwaite ◽  
Y Hou

ABSTRACTThe behaviour of the charge collection efficiency of particle detectors fabricated from Semi-Insulating (SI) Liquid Encapsulated Czochralski (LEC) GaAs as a function of applied bias is investigated for alpha particles and it is shown that it cannot be explained by simple models that assume a uniform electric field across the detector. To investigate this the electric field within the SI GaAs has been studied. We have attempted to correlate the measured charge collection efficiency with the observed field distributions. Some correlation is found but other effects may also be present.


2021 ◽  
pp. 43-50
Author(s):  
A.I. Kondrik

The work is dedicated to studying by computer modeling the mechanisms of the influence of radiation defects, originating under high energy proton irradiation, on the resistivity ρ, lifetime of nonequilibrium electrons n and holes p in CdTe:Cl and Cd0.9Zn0.1Te, and charge collection efficiency η of room temperature ionizing radiation detectors based on these materials. The effect of recombination at deep levels of radiation defects on the degradation of n, p, and  of detectors based on CdTe:Cl and Cd0.9Zn0.1Te was studied. Energy levels of radiation defects also substantially effect on compensation degree of semiconductor decreasing ρ. The main factors affecting the abrupt or gradual decrease in the resistivity and charge collection efficiency of these detectors during their bombardment by high-energy protons, leading to complete degradation of their recording ability, were found. The important role of purity and deep donor concentration in initial state of the detector material was indicated.


2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  

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