Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

2015 ◽  
pp. 1-1 ◽  
Author(s):  
Haoze Luo ◽  
Yuxiang Chen ◽  
Pengfei Sun ◽  
Wuhua LI ◽  
Xiangning He
Keyword(s):  
High Voltage ◽  
High Power ◽  
Delay Time ◽  
Junction Temperature ◽  
Igbt Modules

Material Requirements For High Voltage, High Power Igbt Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
R. Zehringer ◽  
A. Stuck ◽  
T. Lang
Keyword(s):  
High Voltage ◽  
High Power ◽  
Power Transmission ◽  
Future Developments ◽  
Igbt Modules ◽  
The Future ◽  
Materials Used ◽  
Material Requirements

AbstractThe two basic package types of current IGBT modules, which evolved from opposing requirements of traction and power transmission applications, are presented. It is shown that reliability and lifetime aspects given by traction puts most stringent limitations on the choice of materials at given cost targets. The materials used today for high power packaging and the future developments of high power IGBT-packages are discussed.

HIGH POWER SIC PIN RECTIFIERS

2005 ◽  
Vol 15 (04) ◽  
pp. 867-898 ◽  
Author(s):  
Ranbir Singh
Keyword(s):  
High Voltage ◽  
High Power ◽  
High Current Density ◽  
Electric Utility ◽  
Pulsed Power ◽  
Junction Temperature ◽  
Very High Frequency ◽  
Higher Power ◽  
Temperature Capability ◽  
Electronic Hardware

High voltage PiN rectifiers made using conventional semiconductor materials such as Silicon are restricted to less than 20 kHz and less 120°C operation, thereby severely limiting the availability of advanced electronic hardware used for power grid (also called electric utility), energy storage, pulsed power, intelligent machinery and ultra high voltage solid state power conditioning. Such applications require high power density, very high frequency, and high temperature rectifiers to realize reasonably sized systems. SiC PiN Rectifiers are expected to play an enabling role in a variety of such high voltage applications because they have been shown to offer 2 to 3 orders of magnitude faster switching, high junction temperature capability, high current density operation, and much higher power densities as compared to Silicon.

Online Estimation of the Junction Temperature Based on the Gate Pre-Threshold Voltage in High-Power IGBT Modules

2019 ◽  
Vol 19 (3) ◽  
pp. 501-508 ◽  
Author(s):  
Mingxing Du ◽  
Yu Tang ◽  
Mengchao Gao ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
High Power ◽  
Junction Temperature ◽  
Online Estimation ◽  
Igbt Modules
Sign in / Sign up

Export Citation Format

Share Document