Online junction temperature extraction with turn-off delay time for high power IGBTs

2014 ◽  
Author(s):  
Pengfei Sun ◽  
Haoze Luo ◽  
Yufei Dong ◽  
Wuhua Li ◽  
Xiangning He ◽  
...  
Keyword(s):  
High Power ◽  
Delay Time ◽  
Junction Temperature

Study the Effect of Junction Temperature on the Peak Wavelength in GaN-Based High-Power Green Light Emitting Diodes

2011 ◽  
Vol 399-401 ◽  
pp. 1034-1038
Author(s):  
Rong Rong Zhuang ◽  
Ping Cai ◽  
Jiang Li Huang
Keyword(s):  
High Power ◽  
Temperature Rise ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Red Shift ◽  
Junction Temperature ◽  
Spectral Peak ◽  
Peak Wavelength ◽  
Drive Current ◽  
Light Emitting

The junction temperature of GaN-based high-power green light emitting diodes is measured using the temperature coefficients of the diode forward voltage, from changes in temperature and changes in drive current to measure the LED junction temperature and the corresponding spectral, Respectively. Experiments show that, junction temperature due to environmental temperature increased, and the red shift of the spectral peak wavelength. When low temperature or less then the rated current range, the drive current increased in junction temperature rise due to the spectral peak wavelength blue shift . When the current is increased in the range of close to or greater than the rated current, leading to the junction temperature rise will cause spectral red shift . The peak wavelengths’ shift degree of 0.0579nm / k, 0.0751 nm / k and-0.1974nm / k, -0.0915 nm / k are calculated in both cases. The phenomenon is due to the LED junction temperature increases lead to band gap shrinkage, and the result of the role of spontaneous polarization and piezoelectric polarization in Ⅲ-nitride semiconductor materials.

Thermal Analysis of High Power Light Emitting Diodes Package

2011 ◽  
Vol 687 ◽  
pp. 215-221
Author(s):  
Yuan Yuan Han ◽  
Hong Guo ◽  
Xi Min Zhang ◽  
Fa Zhang Yin ◽  
Ke Chu ◽  
...  
Keyword(s):  
Finite Element Method ◽  
High Power ◽  
Thermal Field ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Convective Heat Exchange ◽  
Input Power ◽  
Junction Temperature ◽  
Original Structure ◽  
Light Emitting

With increasing of the input power of the chips in light emitting diode (LED)， the thermal accumulation of LEDs package increases. Therefore solving the heat issue has become a precondition of high power LED application. In this paper, finite element method was used to analyze the thermal field of high power LEDs. The effect of the heatsink structure on the junction temperature was also investigated. The results show that the temperature of the chip is 95.8°C which is the highest, and it meets the requirement. The conductivity of each component affects the thermal resistance. Convective heat exchange is connected with the heat dissipation area. In the original structure of LEDs package the heat convected through the substrate is the highest, accounting for 92.58%. Three heatsinks with fin structure are designed to decrease the junction temperature of the LEDs package.

Temperature Dependence of the Turn-On Delay Time of High-Power Lasers–Thyristors

2019 ◽  
Vol 66 (4) ◽  
pp. 1827-1830
Author(s):  
O. S. Soboleva ◽  
A. A. Podoskin ◽  
V. S. Golovin ◽  
P. S. Gavrina ◽  
V. V. Zolotarev ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
High Power ◽  
Delay Time ◽  
High Power Lasers ◽  
Turn On

Heat Dissipation Simulation Analysis of High Power LED via Heat Slug Geometry Variation

2014 ◽  
Vol 1082 ◽  
pp. 344-347
Author(s):  
Vithyacharan Retnasamy ◽  
Zaliman Sauli ◽  
Rajendaran Vairavan ◽  
Hussin Kamarudin ◽  
Mukhzeer Mohamad Shahimin ◽  
...  
Keyword(s):  
High Power ◽  
Heat Dissipation ◽  
Simulation Analysis ◽  
Life Time ◽  
Junction Temperature ◽  
Von Mises Stress ◽  
Potential Development ◽  
High Power Led ◽  
Superior Surface ◽  
Von Mises

High power LEDs are currently being plagued by heat dissipation challenges due to its high power density thus limiting its further potential development and fulfillment. Exercising proper selection of packaging component could improve the life time of high power LED. In this work, the significance of the heat slug geometry on the heat dissipation of high power LED was addressed through simulation analysis. The heat slug geometries were varied in order to compare the heat dissipation of the high power LED. Ansys version 11 was utilized for the simulation. The heat dissipation of the high power LED was evaluated in terms of junction temperature, von Mises stress and thermal resistance. The key results of the analysis showed that a superior surface area is preferred for an enhanced heat dissipation of high power LED

High Power LED Integrated With Silicon-Based Thermoelectric Cooler Package

2007 ◽  
Author(s):  
Ming-Ji Dai ◽  
Chih-Kuang Yu ◽  
Chun Kai Liu ◽  
Sheng-Liang Kuo
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emitting Diode ◽  
Infrared Camera ◽  
Junction Temperature ◽  
Integrating Sphere ◽  
Thermoelectric Cooler ◽  
High Power Led ◽  
Silicon Based ◽  
Light Efficiency

A new thermal management application of silicon-based thermoelectric (TE) cooler integrated with high power light emitting diode (LED) is investigated in present study. The silicon-based TE cooler herein is fabricated by MEMS fabrication technology and flip-chip assembly process that is used for high power LED cooling. An electrical-thermal conversion method is used to estimate the junction temperature of LED. Moreover, the Integrating Sphere is also used to measure the light efficiency of LED. The thermal images photographed by infrared camera demonstrated the cooling function of the silicon-based TE devices. The results also show that high power LED integrated with silicon-based thermoelectric cooler package can effectively reduce the thermal resistance to zero. In addition, the light efficiency of the LED (1W) will increase under low TE cooler input power (0.55W), which is about 1.3 times of that without TE cooler packaging.

scholarly journals Analysis and Prediction of Thermal Resistance for High Power LED Using GA-SVR

2012 ◽  
Vol 4 ◽  
pp. 153-160
Author(s):  
De Huai Zeng ◽  
Yuan Liu ◽  
Li Li ◽  
De Gui Yu ◽  
Gang Xu
Keyword(s):  
Service Life ◽  
Thermal Resistance ◽  
High Power ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Support Vector ◽  
Mean Squared Errors ◽  
Absolute Relative Error ◽  
High Power Led ◽  
Key Factor

With the development of high power LED technology, junction temperature as a key factor constrains the performance and the service life of LED, and the main parameter of junction temperature is thermal resistance. Therefore, how to measure the thermal resistance of high power LED quickly and accurately plays an important part in improving the performance and the service life of LED. In this paper the accurate and fast measurement equipment was applied to study the thermal characteristics of high power LED. The forward-voltage based method was conducted to measure the junction temperature of high power. Then, support vector regression (SVR) combined with genetic algorithm (GA) for its parameter optimization, was proposed to establish a model to predict the thermal resistance of high power LED. The prediction performance of GA-SVR was compared with those of BPNN model. The result demonstrated that the estimated errors GA-SVR models, such as Mean Absolute Relative Error (MARE) and Root Mean Squared Errors (RMSE), all are smaller than those achieved by the BPNN applying identical samples.

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