Partial Discharge Features for Power Electronic Transformers Under High-Frequency Pulse Voltage

2021 ◽  
Vol 49 (2) ◽  
pp. 845-853
Author(s):  
Jun Jiang ◽  
Bendong Zhang ◽  
Zhi Li ◽  
Prem Ranjan ◽  
Jiawei Chen ◽  
...  

2020 ◽  
Vol 1 (2) ◽  
pp. 94
Author(s):  
Herman Halomoan Sinaga

The design of fractal Hilbert sensor is presented in this paper. The sensor is intended to detect partial discharge (PD) in transformer insulation. The fractal Hilbert sensor designed using 4 order fractal and etching on single layer PCB board. The Hilbert fractal type is chosen as this type of sensor can be built on smaller area compare to other types. The sensor overall dimension is limited to 5x5 cm as it is proposed to be use to detect the PD presence in transformer. The sensor sensitivity is tested using a closed type TEM cell. After the sensitivity of the sensor is tested the sensor then applied to detect the PD signals emitted by void PD defect model. The results show the sensor has sensitivity as high as 10 dB. The sensor also has capability to detect the PD signals generated by the PD defect source. The waveforms captured by the sensor show the sensors can capture high frequency pulse generated by the PD source.  Keywords: Partial Discharge (PD), Fractal Hilbert Sensor UHF, Sensor Sensitivity


Author(s):  
Леонид Потапов ◽  
Leonid Potapov ◽  
Алексей Школин ◽  
Aleksey Shkolin ◽  
Дмитрий Гадашев ◽  
...  

2017 ◽  
Vol 141 ◽  
pp. 545-550 ◽  
Author(s):  
Zhang Hao ◽  
Duan Yubing ◽  
Wang Bin ◽  
Liu Hui ◽  
Lin Ying ◽  
...  

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 213266-213276
Author(s):  
Yi Mao ◽  
Yi Du ◽  
Zhuofan He ◽  
Li Quan ◽  
Xiaoyong Zhu ◽  
...  

Author(s):  
Leonid Potapov ◽  
Aleksey Shkolin

It is shown that the thermal resistance of the junction-case is determined through a partial heat flux and is some characteristic of the crystal fastening in the case of high-frequency pulse voltage converters. It is practically impossible to measure this resistance in mass production because of the high complexity and low accuracy, although this resistance is indicated in the reference data sheet for each IC. To exclude the possibility of hidden defects that are not detected during the control of electrical parameters, it is proposed to use one hundred percent control of thermal parameters by way of comparison with a standard. The transient thermal characteristic can be determined experimentally for a specific IC and specific cooling conditions. After approximation by its exponents, it is possible to construct a thermoelectric model and use it to study the change in the temperature of the IC chip with changing various parameters (supply voltage, load power, etc.).


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