O-band GeSi quantum-confined Stark effect electro-absorption modulator integrated in a 220nm silicon photonics platform
Keyword(s):
Keyword(s):
1998 ◽
Vol 184-185
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pp. 732-736
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1998 ◽
Vol 10
(31)
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pp. L539-L546
2009 ◽
Vol 15
(4)
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pp. 1080-1091
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1989 ◽
Vol 28
(Part 2, No. 11)
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pp. L1982-L1984
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