Monolithically Integrated E-mode GaN-on-SOI Gate Driver with Power GaN-HEMT for MHz-Switching

2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) ◽

10.1109/wipda.2018.8569057 ◽

2018 ◽

Author(s):

Yuki Yamashita ◽

Steve Stoffels ◽

Niels Posthuma ◽

Stefaan Decoutere ◽

Kazutoshi Kobayashi

Keyword(s):

Monolithically Integrated ◽

Gan Hemt ◽

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An E-mode p-GaN HEMT Monolithically-Integrated Three-level Gate Driver Operating with a Single Voltage Supply

IEICE Electronics Express ◽

10.1587/elex.18.20210059 ◽

2021 ◽

Author(s):

Junichiro Nagao ◽

Urmimala Chatterjee ◽

Xiangdong Li ◽

Jun Furuta ◽

Stefaan Decoutere ◽

...

Keyword(s):

Voltage Supply ◽

Monolithically Integrated ◽

Gan Hemt ◽

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P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393645 ◽

2018 ◽

Author(s):

Han Wu ◽

Asad Fayyaz ◽

Alberto Castellazzi

Keyword(s):

Short Circuit ◽

Joint Optimization ◽

Switching Performance ◽

Gan Hemt ◽

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Design of Transient Enhanced LDO Circuit for GaN HEMT Gate Driver

10.1109/icicm54364.2021.9660317 ◽

2021 ◽

Author(s):

Li Wang ◽

Dejin Zhou ◽

Ningye He ◽

Yuan Xu ◽

Xiaoxiong He ◽

...

Keyword(s):

Gan Hemt ◽

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Capacitor-Based Three-Level Gate Driver for GaN HEMT Only with a Single Voltage Supply

2020 IEEE 21st Workshop on Control and Modeling for Power Electronics (COMPEL) ◽

10.1109/compel49091.2020.9265674 ◽

2020 ◽

Author(s):

Junichiro Nagao ◽

Jun Furuta ◽

Kazutoshi Kobayashi

Keyword(s):

Voltage Supply ◽

Gan Hemt ◽

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Impact of Substrate Termination on Dynamic On-State Characteristics of a Normally-off Monolithically Integrated Bidirectional GaN HEMT

2019 IEEE Energy Conversion Congress and Exposition (ECCE) ◽

10.1109/ecce.2019.8912793 ◽

2019 ◽

Author(s):

Carsten Kuring ◽

Nick Wieczorek ◽

Oliver Hilt ◽

Mihaela Wolf ◽

Jan Bocker ◽

...

Keyword(s):

Monolithically Integrated ◽

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Monolithically Integrated E/D InAlN/GaN HEMT And Inverters On Sapphire Substrate

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2019.8754039 ◽

2019 ◽

Author(s):

Guodong Gu ◽

Shaobo Dun ◽

Hongyu Guo ◽

Yuanjie lv ◽

Zhirong Zhang ◽

...

Keyword(s):

Sapphire Substrate ◽

Monolithically Integrated ◽

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GaN HEMT-Based >1-GHz Speed Low-Side Gate Driver and Switch Monolithic Process for 865-MHz Power Conversion Applications

IEEE Journal of Emerging and Selected Topics in Power Electronics ◽

10.1109/jestpe.2016.2564946 ◽

2016 ◽

Vol 4 (3) ◽

pp. 918-925 ◽

Author(s):

Vivek Mehrotra ◽

Andrea Arias ◽

Charles Neft ◽

Joshua Bergman ◽

Miguel Urteaga ◽

...

Keyword(s):

Power Conversion ◽

Gan Hemt ◽

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Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

Journal of Semiconductors ◽

10.1088/1674-4926/32/6/065001 ◽

2011 ◽

Vol 32 (6) ◽

pp. 065001 ◽

Author(s):

Yuanbin Xie ◽

Si Quan ◽

Xiaohua Ma ◽

Jincheng Zhang ◽

Qingmin Li ◽

...

Keyword(s):

Plasma Treatment ◽

Flip Flop ◽

Monolithically Integrated ◽

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Resonant Gate Driver for a Normally-On GaN HEMT

IEEE Journal of Emerging and Selected Topics in Power Electronics ◽

10.1109/jestpe.2016.2587058 ◽

2016 ◽

pp. 1-1 ◽

Author(s):

Masayuki Okamoto ◽

Takaharu Ishibashi ◽

Hiroaki Yamada ◽

Toshihiko Tanaka

Keyword(s):

Gan Hemt ◽

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Normally‐off AlGaN/GaN‐on‐Si MOS‐HFET with a monolithically integrated single‐stage inverter as a gate driver

Electronics Letters ◽

10.1049/el.2016.2813 ◽

2017 ◽

Vol 53 (3) ◽

pp. 198-199 ◽

Author(s):

S.‐W. Han ◽

S.‐H. Park ◽

H.‐S. Kim ◽

M.‐G. Jo ◽

H.‐Y. Cha

Keyword(s):

Single Stage ◽

Monolithically Integrated ◽

Gate Driver ◽

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