2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393637 ◽

2018 ◽

Author(s):

J. Biscarrat ◽

R. Gwoziecki ◽

Y. Baines ◽

J. Buckley ◽

C. Gillot ◽

...

Keyword(s):

Performance Enhancement ◽

Schottky Diodes ◽

Silicon Wafers ◽

Cmos Compatible

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Non-full depletion mode and its experimental realization of the lateral superjunction

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393706 ◽

2018 ◽

Cited By ~ 7

Author(s):

Wentong Zhang ◽

Song Pu ◽

Chunlan Lai ◽

Li Ye ◽

Shikang Cheng ◽

...

Keyword(s):

Experimental Realization ◽

Full Depletion

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Dynamic stability analysis based on state-space model and Lyapunov's stability criterion for SiC-MOS and Si-IGBT switching

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393654 ◽

2018 ◽

Author(s):

Xiao Zeng ◽

Zehong Li ◽

Yuzhou Wu ◽

Wei Gao ◽

Jinping Zhang ◽

...

Keyword(s):

Stability Analysis ◽

State Space ◽

Dynamic Stability ◽

Stability Criterion ◽

State Space Model ◽

Space Model

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Influence of doping profiles and chip temperature on short-circuit oscillations of IGBTs

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393614 ◽

2018 ◽

Cited By ~ 3

Author(s):

Vera van Treek ◽

Hans-Joachim Schulze ◽

Franz-Josef Niedernostheide ◽

Christian Sandow ◽

Roman Baburske ◽

...

Keyword(s):

Short Circuit ◽

Chip Temperature ◽

Doping Profiles

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A 750V recessed-emitter-trench IGBT with recessed-dummy-trench structure featuring low switching losses

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393615 ◽

2018 ◽

Author(s):

Yao Yao ◽

Haihui Luo ◽

Qiang Xiao ◽

Chunlin Zhu ◽

Haibo Xiao ◽

...

Keyword(s):

Switching Losses ◽

Trench Structure

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Surge current failure mechanisms in 4H-SiC JBS rectifiers

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393691 ◽

2018 ◽

Cited By ~ 1

Author(s):

Edward Van Brunt ◽

Thomas Barbieri ◽

Adam Barkley ◽

Jim Solovey ◽

Jim Richmond ◽

...

Keyword(s):

Failure Mechanisms ◽

Surge Current

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Chip-scale cooling of power semiconductor devices: Fabrication of Jet impingement design

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393716 ◽

2018 ◽

Author(s):

Feng Zhou ◽

Ki Wook Jung ◽

Yuji Fukuoka ◽

Ercan M. Dede

Keyword(s):

Semiconductor Devices ◽

Jet Impingement ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393703 ◽

2018 ◽

Cited By ~ 3

Author(s):

Abdallah Hussein ◽

Bassem Mouawad ◽

Alberto Castellazzi

Keyword(s):

Performance Analysis ◽

Dynamic Performance ◽

Dynamic Performance Analysis

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Performance and reliability insights of drain extended FinFET devices for high voltage SoC applications

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393605 ◽

2018 ◽

Cited By ~ 4

Author(s):

B Sampath Kumar ◽

Milova Paul ◽

Mayank Shrivastava ◽

Harald Gossner

Keyword(s):

High Voltage

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Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393657 ◽

2018 ◽

Cited By ~ 5

Author(s):

Xuanwu Kang ◽

Xinhua Wang ◽

Sen Huang ◽

Jinhan Zhang ◽

Jie Fan ◽

...

Keyword(s):

Schottky Barrier ◽

Turn On ◽

Reverse Blocking ◽

Schottky Rectifier

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

Non-full depletion mode and its experimental realization of the lateral superjunction

Dynamic stability analysis based on state-space model and Lyapunov's stability criterion for SiC-MOS and Si-IGBT switching

Influence of doping profiles and chip temperature on short-circuit oscillations of IGBTs

A 750V recessed-emitter-trench IGBT with recessed-dummy-trench structure featuring low switching losses

Surge current failure mechanisms in 4H-SiC JBS rectifiers

Chip-scale cooling of power semiconductor devices: Fabrication of Jet impingement design

Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling

Performance and reliability insights of drain extended FinFET devices for high voltage SoC applications

Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking

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2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Performance enhancement of CMOS compatible 600V rated AlGaN/GaN Schottky diodes on 200mm silicon wafers

Non-full depletion mode and its experimental realization of the lateral superjunction

Dynamic stability analysis based on state-space model and Lyapunov's stability criterion for SiC-MOS and Si-IGBT switching

Influence of doping profiles and chip temperature on short-circuit oscillations of IGBTs

A 750V recessed-emitter-trench IGBT with recessed-dummy-trench structure featuring low switching losses

Surge current failure mechanisms in 4H-SiC JBS rectifiers

Chip-scale cooling of power semiconductor devices: Fabrication of Jet impingement design

Dynamic performance analysis of a 3.3 kV SiC MOSFET half-bridge module with parallel chips and body-diode freewheeling

Performance and reliability insights of drain extended FinFET devices for high voltage SoC applications

Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications