The Characterization of N Interstitials and Dangling Bond Point Defects on Ion-Implanted GaN Nanowires Studied by Photoluminescence and X-Ray Absorption Spectroscopy

2010 ◽  
Vol 93 (11) ◽  
pp. 3531-3534 ◽  
Author(s):  
Kuo-Hao Lee ◽  
Jau-Wern Chiou ◽  
Jin-Ming Chen ◽  
Jyh-Fu Lee ◽  
Alain Braud ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Point Defects ◽  
Dangling Bond ◽  
X Ray ◽  
Gan Nanowires ◽  
X Ray Absorption ◽  
Ion Implanted

Structural and Chemical Characterization of Mn Doped GaN Nanowires by X-ray Absorption Spectroscopy

2009 ◽  
Vol 9 (11) ◽  
pp. 6772-6776 ◽  
Author(s):  
Han-Kyu Seong ◽  
Ungkil Kim ◽  
Myoung-Ha Kim ◽  
Hyun-Hwi Lee ◽  
Dong-Ryeol Lee ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Chemical Characterization ◽  
X Ray ◽  
Gan Nanowires ◽  
X Ray Absorption ◽  
Mn Doped

Characterization of an Oxo(porphyrinato)manganese(IV) Complex by X-ray Absorption Spectroscopy

1995 ◽  
Vol 34 (3) ◽  
pp. 343-346 ◽  
Author(s):  
John M. Charnock ◽  
C. David Garner ◽  
Alfred X. Trautwein ◽  
Eckard Bill ◽  
Heiner Winkler ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
X Ray ◽  
X Ray Absorption
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