scholarly journals Processing and electromechanical properties of high‐coercive field ZnO‐doped PIN‐PZN‐PT ceramics

2020 ◽  
Vol 103 (9) ◽  
pp. 4794-4802 ◽  
Author(s):  
Michael J. Brova ◽  
Beecher H. Watson ◽  
Rebecca L. Walton ◽  
Elizabeth R. Kupp ◽  
Mark A. Fanton ◽  
...  

2020 ◽  
Vol 103 (11) ◽  
pp. 6149-6156 ◽  
Author(s):  
Michael J. Brova ◽  
Beecher H. Watson ◽  
Rebecca L. Walton ◽  
Elizabeth R. Kupp ◽  
Mark A. Fanton ◽  
...  




2011 ◽  
Vol 11 (3) ◽  
pp. 2632-2635
Author(s):  
Gunadhor S. Okram ◽  
Ajay Soni ◽  
D. T. Adroja ◽  
N. P. Lalla ◽  
T. Shripathi


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Nguyen Dinh Tung Luan ◽  
Le Dai Vuong ◽  
Truong Van Chuong ◽  
Nguyen Truong Tho

The 0.9Pb(ZrxTi1−x)O3-0.07Pb(Mn1/3Nb2/3)O3-0.03Pb(Sb1/2Nb1/2)O3(PZT-PMnN-PSN) ceramics were prepared by columbite method. The phase structure of the ceramic samples was analyzed. Results show that the pure perovskite phase is in all ceramics specimens. The effect of the Zr/Ti ratio on the region of morphotropic phase boundary for PZT-PMnN-PSN ceramics was studied. Experimental results show that the phase structure of ceramics changes from tetragonal to rhombohedral with the increase of the content of Zr/Ti ratio in the system. The composition of PZT-PMnN-PSN ceramics near the morphotropic phase boundary obtained is the ratio of Zr/Ti: 49/51. At this ratio, the ceramic has the optimal electromechanical properties: thekp=0.61, theεmax=29520, thed31=-236 pC/N, theQm=2400, high remanent polarization (Pr=49.2 μC·cm−2), and low coercive fieldEc=10.28 kV·cm−1.



APL Materials ◽  
2016 ◽  
Vol 4 (8) ◽  
pp. 086113 ◽  
Author(s):  
Adel Kalache ◽  
Guido Kreiner ◽  
Siham Ouardi ◽  
Susanne Selle ◽  
Christian Patzig ◽  
...  


2018 ◽  
Vol 124 (21) ◽  
pp. 213904 ◽  
Author(s):  
K. Knížek ◽  
M. Pashchenko ◽  
P. Levinský ◽  
O. Kaman ◽  
J. Houdková ◽  
...  


1996 ◽  
Vol 32 (5) ◽  
pp. 4570-4572 ◽  
Author(s):  
D. Sander ◽  
A. Enders ◽  
R. Skomski ◽  
J. Kirschner


1997 ◽  
Vol 48 (6) ◽  
pp. 1319-1324 ◽  
Author(s):  
M. Feder ◽  
Maria Popescu ◽  
E. Segal ◽  
N. Dragoe ◽  
D. Crisan ◽  
...  


2003 ◽  
Vol 15 (19) ◽  
pp. 1622-1625 ◽  
Author(s):  
A. Hutlova ◽  
D. Niznansky ◽  
J.-L. Rehspringer ◽  
C. Estournès ◽  
M. Kurmoo


Author(s):  
Kemining W. Yeh ◽  
Richard S. Muller ◽  
Wei-Kuo Wu ◽  
Jack Washburn

Considerable and continuing interest has been shown in the thin film transducer fabrication for surface acoustic waves (SAW) in the past few years. Due to the high degree of miniaturization, compatibility with silicon integrated circuit technology, simplicity and ease of design, this new technology has played an important role in the design of new devices for communications and signal processing. Among the commonly used piezoelectric thin films, ZnO generally yields superior electromechanical properties and is expected to play a leading role in the development of SAW devices.



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