A Parametric Study of the Impact of Energy Relaxation Time on Thermal Behavior of Power Si MOSFET in Electro-Thermal Analysis

2015 ◽  
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Shinji Nakagawa ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Relaxation Time ◽  
Thermal Properties ◽  
Temperature Distribution ◽  
Energy Relaxation ◽  
Electrical Field ◽  
Energy Relaxation Time ◽  
Distribution Of Power

This paper describes the effect of variation of energy relaxation time on temperature distribution of power Si MOSFET in electro-thermal analysis. In previous our studies, thermal properties of power Si MOSFET are evaluated using electro-thermal analysis. However, in our previous calculation, energy relaxation time has been assumed to be constant at 0.3 ps, which is widely used value in electro-thermal analysis. This is because energy relaxation time cannot be calculated by classical physics, and it is difficult to detect exact energy relaxation time. However, energy relaxation time is important for evaluating heat generation in electro-thermal analysis. One method to obtain energy relaxation time is Monte Carlo simulation. In this research, we performed Monte-Carlo simulation, and electrical field and lattice temperature dependencies of energy relaxation time were evaluated. Then, we performed electro-thermal analysis of power Si MOSFET with various energy relaxation times, and the effect of change of energy relaxation time on temperature distribution of power Si MOSFET in electro-thermal analysis was discussed. Energy relaxation time in the range of 0.1–1000 kV/cm of electrical field was evaluated in Monte Carlo simulation. The results of Monte-Carlo simulation showed that maximum energy relaxation time becomes about 0.6 ps, and minimum energy relaxation time is about 0.30 ps. Following the results, to investigate the effect of variation of energy relaxation time on temperature distribution of power Si MOSFET, we changed energy relaxation time in electro-thermal analysis, and thermal properties of power Si MOSFET was calculated. The results of electro-thermal analysis showed that energy relaxation time has an effect on temperature distribution of power Si MOSFET. Therefore, accurate energy relaxation time should be considered in electro-thermal analysis for appropriate temperature distribution of power Si MOSFET.

Electron energy relaxation time in Si and Ge

1973 ◽  
Vol 34 (3) ◽  
pp. 547-564 ◽  
Author(s):  
M. Costato ◽  
S. Fontanesi ◽  
L. Reggiani
Keyword(s):  
Relaxation Time ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Energy Relaxation Time

Flux flow instability as a probe for quasiparticle energy relaxation time in Fe-chalcogenides

2020 ◽  
Vol 33 (10) ◽  
pp. 104005
Author(s):  
Antonio Leo ◽  
Angela Nigro ◽  
Valeria Braccini ◽  
Giulia Sylva ◽  
Alessia Provino ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Flow Instability ◽  
Energy Relaxation ◽  
Flux Flow ◽  
Energy Relaxation Time ◽  
Quasiparticle Energy

The Influnence of the Amplitude and Frequency of Sweeped Magnetic Field on the Exchange Bias and Coercivity for Ferromagnetic / Antiferromagnetic Films: Monte Carlo Simulation

2011 ◽  
Vol 694 ◽  
pp. 538-542
Author(s):  
Wen Ting Zheng ◽  
Li Qin Jiang ◽  
Zhi Gao Huang
Keyword(s):  
Magnetic Field ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Relaxation Time ◽  
Monte Carlo Method ◽  
External Magnetic Field ◽  
Low Temperature ◽  
Exchange Bias

The influnence of the amplitude (H0) and frequency of sweeped magnetic field on the exchange bias He and coercivity Hc for ferromagnetic/ antiferromagnetic films has been simulated with Monte Carlo method. In a cycle, the sweeped frequency is inversely proportional to Monte Carlo steps (MCSs). It is observed that, for smaller MCSs, the values of He and the blocking tempreture Tb reduce evidently with increasing MCSs; for larger MCSs, the values of He and Tb decrease gently with increasing MCSs. It is also found the values of He and Tb decrease obviously with increasing values of H0 (HN0). However, on the contrary, the value of Hc increases with increasing values of H0 (HN0). At low temperature and little HN0, the asymmetric loop may appear, which is attributed to the competition between the relaxation time and the period of the external magnetic field. Moreover, the symmetry of the loops influences evidently the values of He and Hc.

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