Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire
2002 ◽
Vol 20
(4)
◽
pp. 1410
◽
Dae Hwan Kim
◽
Suk-Kang Sung
◽
Kyung Rok Kim
◽
Jong Duk Lee
◽
Byung-Gook Park
2001 ◽
Vol 90
(7)
◽
pp. 3551-3557
◽
Ken Uchida
◽
Junji Koga
◽
Ryuji Ohba
◽
Shin-ichi Takagi
◽
Akira Toriumi
T. Teja Jupalli
◽
G. Prabhudesai
◽
M. Hasan
◽
A. Debnath
◽
P. Jeevan Kumar
◽
...
2006 ◽
Vol 88
(7)
◽
pp. 073112
◽
Yasuhiko Ishikawa
◽
Chihiro Yamamoto
◽
Michiharu Tabe
2003 ◽
Vol 34
(3-6)
◽
pp. 245-251
◽
K.H Cho
◽
S.H Son
◽
S.H Hong
◽
B.C Kim
◽
S.W Hwang
◽
...
1998 ◽
Vol 168
(2)
◽
pp. 219
V.A. Krupenin
◽
S.V. Lotkhov
◽
H. Scherer
◽
A.B. Zorin
◽
F.-J. Ahlers
◽
...
1994 ◽
Vol 194-196
◽
pp. 1309-1310
◽
N. Yoshikawa
◽
K. Fukushima
◽
M. Sugahara
1993 ◽
Vol 3
(1)
◽
pp. 1980-1982
◽
J.M. Hergenrother
◽
M.T. Tuominen
◽
T.S. Tighe
◽
M. Tinkham
S.-J. Kim
◽
Yu.I. Latyshev
◽
T. Yamashita
V.I. Kleshch
◽
A.N. Obraztsov
◽
V. Porshyn
◽
D. Lutzenkirchen-Hecht