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junctionless transistors
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TOTAL DOCUMENTS
148
(FIVE YEARS 36)
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22
(FIVE YEARS 2)
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Latest Documents
Most Cited Documents
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Effects of Hafnium Oxide on Short Channel Effects and DC Analysis for Double Gate Junctionless Transistors
Transactions on Electrical and Electronic Materials
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10.1007/s42341-021-00365-6
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2021
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Author(s):
Hitesh Kumar Phulawariya
◽
Achinta Baidya
◽
Reshmi Maity
◽
Niladri Pratap Maity
Keyword(s):
Hafnium Oxide
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Double Gate
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Short Channel Effects
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Short Channel
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Channel Effects
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Junctionless Transistors
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Charge Pumping-Based Method for Traps Density Extraction in Junctionless Transistors
10.1109/eurosoi-ulis53016.2021.9560678
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2021
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Author(s):
E. T. Fonte
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R. Trevisoli
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R. T. Doria
Keyword(s):
Charge Pumping
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Junctionless Transistors
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Comparative Analysis & Study of Various Leakage Reduction Techniques for Short Channel Devices in Junctionless Transistors: A Review and Perspective
Silicon
◽
10.1007/s12633-021-01181-6
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2021
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Author(s):
Manish Kumar Rai
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Abhinav Gupta
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Sanjeev Rai
Keyword(s):
Comparative Analysis
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Short Channel
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Analysis Study
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Leakage Reduction
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Reduction Techniques
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Junctionless Transistors
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Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors
ECS Journal of Solid State Science and Technology
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10.1149/2162-8777/ac0607
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2021
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Author(s):
Manish Gupta
◽
Vita Pi-Ho Hu
Keyword(s):
Negative Capacitance
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Junctionless Transistors
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Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors
AIP Advances
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10.1063/5.0035460
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2021
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Vol 11
(5)
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pp. 055111
Author(s):
Dae-Young Jeon
Keyword(s):
Threshold Voltage
◽
Channel Geometry
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Junctionless Transistors
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Ultra-low power subthreshold logic with Germanium junctionless transistors
Semiconductor Science and Technology
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10.1088/1361-6641/abfd16
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2021
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Author(s):
Pradeep Shrivas
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Nivedita Jaiswal
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Sandeep Semwal
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Abhinav Kranti
Keyword(s):
Low Power
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Ultra Low Power
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Junctionless Transistors
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Subthreshold Logic
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Improved Switching Time in Negative Capacitance Junctionless Transistors
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
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10.1109/vlsi-tsa51926.2021.9440137
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2021
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Author(s):
Manish Gupta
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Vita Pi-Ho Hu
Keyword(s):
Switching Time
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Negative Capacitance
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Junctionless Transistors
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Channel-hot-carrier degradation in the channel of junctionless transistors: a device- and circuit-level perspective
Journal of Computational Electronics
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10.1007/s10825-021-01688-6
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2021
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Author(s):
Meena Panchore
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Lokesh Bramhane
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Jawar Singh
Keyword(s):
Hot Carrier
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Junctionless Transistors
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Hot Carrier Degradation
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Study and Analysis of Advanced 3D Multi-Gate Junctionless Transistors
Silicon
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10.1007/s12633-020-00904-5
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2021
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Author(s):
Raj Kumar
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Shashi Bala
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Arvind Kumar
Keyword(s):
Junctionless Transistors
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Impact of Channel Length on the Operation of Junctionless Transistors With Substrate Biasing
IEEE Transactions on Electron Devices
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10.1109/ted.2021.3069936
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2021
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pp. 1-4
Author(s):
Dae-Young Jeon
◽
Mireille Mouis
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Sylvain Barraud
◽
Gerard Ghibaudo
Keyword(s):
Channel Length
◽
Junctionless Transistors
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