Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water

Group III–V compound semiconductors are attracting attention as new channel materials that have higher carrier mobility than Si. However, defects easily occur at the interface between the semiconductor and insulator film, which degrades performance. In an earlier study, we demonstrated that the interfacial properties of InP are degraded by the growth of In2O3 and that In2O3 grows better in water than in air. Therefore, it is necessary to suppress the growth of In2O3 to improve the interfacial properties of InP. In this work, we focused on functional water, which can be controlled by adjusting the water conditions, and investigated the growth behavior of In2O3 in functional water. As a result, we found that the growth is suppressed in the low-pH range and in hydrogen water. It is important that H+ ions reduce OH− ions, which contributes to the reaction with InP.

Особенности МДП-структур с фторидом самария на кремниевых и германиевых подложках

The electrophysical characteristics of silicon and germanium MIS structures with an SmF_3 insulator film, as well as their degradation due to the effect of electric fields, although similar, have a number of specific features. The current-transmission mechanism in all studied structures is described by the power dependence. Interface traps form the charge of electrically active traps, which varies during capacitance–voltage measurements, and the charge of inactive traps, which remains invariable. This charge is negative on the n -Ge surface, and the corresponding charge on the n -type and p -type silicon surface is positive. The trap charge density in the bulk of samarium fluoride lies in the range from –0.2 × 10^–8 to 0.6 × 10^–8 C/cm^2 and is negligibly small when compared with the charge of interface traps in most cases.

Sb2Te3 topological insulator: surface plasmon resonance and application in refractive index monitoring

The visible-range SPR on an Sb2Te3 topological insulator film is experimentally demonstrated and applied for the dynamic monitoring of refractive index variation.

Mitigation of Dielectric Charging in MEMS Capacitive Switches with Stacked TiO2/Y2O3 Insulator Film

Metal-insulator-metal (MIM) capacitors with single TiO2 and a TiO2/Y2O3 stack are used as insulator films in MIM and MEMS, respectively, are explored. It is found that, under electron injection from bottom electrode, the TiO2 MIM capacitors demonstrate resistive switching with a magnitude of leakage currents not usable for MEMS application. The deposition of a stacked TiO2/Y2O3 dielectric film improves the MEMS performance without compromising the low dielectric charging of TiO2 single layer.