Numerical Study of Duffing Nonlinearity in the Quantum Dot Embedded Nanomechanical Resonator

Geometry, electrostatics, and single-electron tunneling contribute to the nonlinearity in the quantum dot embedded nanomechanical resonator, while “Duffing term” is a kind of mathematics describing the third-order nonlinearity of the system as a whole. We study theoretically the influence of a variation of a mathematical parameter Fuffing term on the actual physical effect. The position probability distribution, the average current, and the displacement fluctuation spectrum with the different Duffing parameter and electromechanical coupling are obtained through numerically calculating the Fokker Planck equation. The mechanical bistability has been described by these quantities under different electromechanical coupling and Duffing parameters. We conclude that the nonlinearities of the nanotube resonator contribute to the mechanical bistability, which induces the asymmetry of the position probability distribution, compresses the current, and softens or stiffens the mechanical resonance frequency as the same as the electromechanical coupling to use it in mechanical engineering.

Digital Circuits and Systems based on Single-Electron Tunneling Technology

In this work, digital circuits and systems based on single-electron tunneling technology will be presented and analyzed. A simple design methodology will be proposed using a programmable single-electron NAND/NOR gate as a building block. Aspects such as operating temperature, noise, and charge fluctuations will be discussed. SET devices can reach ultra-low power consumption and high frequencies during operation. Although there are already many digital SET circuits and systems previously proposed and studied, there are few works about design methodology for SETs. This study shows a proposal for designing combinational and sequential singleelectron circuits aiming at systems design. In the end, this work reinforces the use of single-electron technology as a possible large scale device in the future.

Coulomb Blockade Effects by Single Electron Tunneling Methods in Cylindrical Dual Gate OLET Configuration

In the field of nano electronics some nano-structure applications such as quantum dots (QDs), wires, wells and bulks must have distinctive potentials. These crystal structures emerged by an inorganic organic hybrid halide materials which processes in tremendous optoelectronic applications like electroluminescence, photoluminescence quantum yield (93.2%). There is a need of coupling to their surroundings by these structures which can either add or subtract electrons from the electrodes. As per state of the art the significant research efforts in about an isolated quantum dot coupling through tunneling of two leads that is source lead for supply of electrons and a drain lead for removes of electrons and their performances will be offered and discussed in the view for the realization of possible between Dual Gate Cylindrical Organic Light Emitting Transistor (OLET) architectures. In this article we examined the optical as well as electrical characteristics operation of cylindrical Dual Gate OLET (CDGOLET). Last year perovskite quantum dot (PQD) most preferred for the purpose of light-emitting transistors with high brightness of up to 1.432× 104 cd m− 2, high electron mobility’s of up to 14.052 cm2 v− 1 s− 1, and their external quantum efficiencies (EQE) of up to 1.85% operating at a source drain operating potential of 50 V.

Analysis of Triple Quantum Dots Single Electron Transistor (TQD-SET) for Various Configuration

<p class="Abstract">Single electron transistor (SET) has high potential for the development of quantum computing technologies in order to provide low power consumption electronics. For that purpose, many studies have been conducted to develop SET using dopants as quantum dots (QD). The working principle of SET basically is a single electron tunneling one by one through tunnel junction based on the coulomb blockade effect. This research will simulate various configurations of triple quantum dots single electron transistors (TQD-SET) using SIMON 2.0 with an experimental approach of MOSFET with dopants QD. The configurations used are series, parallel, and triangle configuration. The mutual capacitance (Cm), tunnel junctions (TJ), and temperature values of TQD-SET configurations are varied. The I-V characteristics are observed and analyzed for typical source-drain voltage (Vsd). it is found that the TQD series requires larger Vsd than parallel or triangular TQDs. On the other hands, the current in parallel TQD tends to be stable even though Cm is changed, and the current in the TQD triangle is strongly influenced by the Cm. By comparing these three configurations, it is observed that the tunnelling rate is higher for parallel TQD due to higher probability current moves through three dots by applying Vds.</p>