Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si–SiO[sub 2] interface

Author(s):  
G. Lucovsky ◽  
J. C. Phillips
2020 ◽  
Vol 514 ◽  
pp. 145875
Author(s):  
O. de Melo ◽  
V. Torres-Costa ◽  
Y. González ◽  
A. Ruediger ◽  
C. de Melo ◽  
...  

1994 ◽  
Vol 39 (9) ◽  
pp. 916-916
Author(s):  
Terri Gullickson

1996 ◽  
Author(s):  
Z. Kupper ◽  
W. Tschacher ◽  
H. Hoffmann
Keyword(s):  

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