Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO[sub 2] and alternative gate dielectrics

2004 ◽  
Vol 22 (4) ◽  
pp. 2097 ◽  
Author(s):  
G. Lucovsky ◽  
J. P. Maria ◽  
J. C. Phillips
Keyword(s):  
Gate Dielectrics ◽  
Self Organization ◽  
Gate Stacks ◽  
Strain Relief ◽  
Dielectric Interfaces ◽  
Interfacial Strain

High κ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy

2002 ◽  
Vol 745 ◽  
Author(s):  
J. Raynien Kwo ◽  
Minghwei Hong
Keyword(s):  
Physical Vapor Deposition ◽  
Gate Dielectrics ◽  
Compound Semiconductors ◽  
State Density ◽  
Dielectric Films ◽  
Gate Stacks ◽  
Materials Integration ◽  
Cmos Scaling ◽  
Atomic Precision ◽  
Critical Issues

ABSTRACTThe ability of controlling the growth and interfaces of ultrathin dielectric films on Si and compound semiconductors by ultrahigh vacuum physical vapor deposition has led to comprehensive studies of gate stacks employing the high κ gate oxide Ga2O3(Gd2O3), and the rare earth oxides Gd2O3 and Y2O3. The epitaxy and the interfaces of Gd2O3 on GaAs, GaN, and Si were characterized with atomic precision, and show strong tendency to conform to the underlying substrate, thus providing insight into the fundamental mechanism for low interfacial state density and effective passivation of GaAs and GaN surfaces. These Gd2O3 and Y2O3 gate stacks of abrupt interfaces and controlled microstructures were employed as a model system to elucidate critical issues of materials integration in CMOS scaling.

Bonding Constraints at Interfaces Between Crystalline Si and Stacked Gate Dielectrics

1999 ◽  
Vol 567 ◽  
Author(s):  
G. Lucovsky ◽  
J.C. Phillips
Keyword(s):  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Chemical Bonding ◽  
Gate Dielectrics ◽  
Nuclear Charge ◽  
Dielectric Materials ◽  
Band Offset ◽  
High K ◽  
Dielectric Interfaces ◽  
Mechanical Bonding

ABSTRACTThis paper discusses chemical bonding effects at Si-dielectric interfaces that are important in the implementation of alternative gate dielectrics including: i) the character of interfacial bonds, either isovalent with bond and nuclear charge balanced as in Si-SiO2, or heterovalent, with an inherent mismatch between bond and nuclear charge, ii) mechanical bonding constraints related to the average number of bonds/atom, Nay, and iii) band offset energies that are reduced in transition metal oxides due to the d-state origins of the conduction band states. Applications are made to specific classes of dielectric materials including i) nitrides and oxide/nitride stacks and ii) alternative high-K gate materials.

scholarly journals AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

2016 ◽  
Vol 119 (20) ◽  
pp. 204101 ◽  
Author(s):  
Y. Guo ◽  
H. Li ◽  
J. Robertson
Keyword(s):  
Gate Dielectrics ◽  
Gate Stacks
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