Addressable field emitter array: A tool for designing field emitters and a multibeam electron source

Author(s):  
S. Bauerdick ◽  
C. Burkhardt ◽  
D. P. Kern ◽  
W. Nisch
2000 ◽  
Vol 621 ◽  
Author(s):  
Y.M. Fung ◽  
W.Y. Cheung ◽  
I.H. Wilson ◽  
J.B. Xu ◽  
S.P. Wong

ABSTRACTA new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01cm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.


2009 ◽  
Vol 48 (6) ◽  
pp. 06FK02 ◽  
Author(s):  
Masayoshi Nagao ◽  
Tomoya Yoshida ◽  
Seigo Kanemaru ◽  
Yoichiro Neo ◽  
Hidenori Mimura

2010 ◽  
Vol 97 (11) ◽  
pp. 113107 ◽  
Author(s):  
Chi Li ◽  
Yan Zhang ◽  
Mark Mann ◽  
David Hasko ◽  
Wei Lei ◽  
...  

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