Increased pattern transfer fidelity of ZEP 520A during reactive ion etching through chemical modifications by additional dosing of the electron beam resist

2011 ◽  
Vol 29 (2) ◽  
pp. 021601 ◽  
Author(s):  
David A. Czaplewski ◽  
Leonidas E. Ocola
Keyword(s):  
Electron Beam ◽  
Reactive Ion Etching ◽  
Pattern Transfer ◽  
Chemical Modifications ◽  
Ion Etching

Ion and electron beam deposited masks for pattern transfer by reactive ion etching

2011 ◽  
Vol 88 (8) ◽  
pp. 2710-2713 ◽  
Author(s):  
A. Notargiacomo ◽  
E. Giovine ◽  
L. Di Gaspare
Keyword(s):  
Electron Beam ◽  
Reactive Ion Etching ◽  
Pattern Transfer ◽  
Ion Etching

Use of polymethylmethacrylate as an initial pattern transfer layer in fluorine- and chlorine-based reactive-ion etching

1999 ◽  
Vol 17 (1) ◽  
pp. 113 ◽  
Author(s):  
Christopher J. M. Smith ◽  
Saad K. Murad ◽  
Thomas F. Krauss ◽  
Richard M. De La Rue ◽  
Christopher D. W. Wilkinson
Keyword(s):  
Reactive Ion Etching ◽  
Pattern Transfer ◽  
Transfer Layer ◽  
Ion Etching ◽  
Initial Pattern

50−nm silicon structures fabricated with trilevel electron beam resist and reactive‐ion etching

1981 ◽  
Vol 39 (3) ◽  
pp. 268-270 ◽  
Author(s):  
L. D. Jackel ◽  
R. E. Howard ◽  
E. L. Hu ◽  
D. M. Tennant ◽  
P. Grabbe
Keyword(s):  
Electron Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Silicon Structures
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