Optimized MEMS Pirani sensor with increased pressure measurement sensitivity in the fine and high vacuum regime

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Mario Grau ◽  
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Grit Hemer ◽  
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1991 ◽  
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Kiyohide KOKUBUN ◽  
Hazime SHIMIZU ◽  
Shingo ICHIMURA ◽  
Humio KAWAHARA ◽  
Minoru KONDO

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1989 ◽  
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Kenzabro SUGISAKI ◽  
Hajime ISHIMARU

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1992 ◽  
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Tomoaki HINO ◽  
Tohiro YAMASHINA ◽  
Toshio KIKUCHI ◽  
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2013 ◽  
Vol 347-350 ◽  
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Hou Ya Wu ◽  
Tie Niu Yang ◽  
Xiao Jun Wang

wafer processing is one process of the IC industry which is a booming area nowadays, the quality of the production of this course depends on the performance of the film which is formed by deposition. And one of the most important factors influencing the performance is working pressure. Variable structure chamber for flowing experiment and testing which is a multifunction testing platform with changeable structure and sufficient measurement points all-covered the chamber, a device has been designed and manufactured to measure and research vacuum flow filed. By using this equipment, the pressure in vacuum chamber could be measured precisely and promptly, thus relationships among the size and shape of the chamber, the pressure, and the gauges would be clear, there would be helpful for vacuum measurement. Background The course of manufacturing a chip of IC production including 400~500 processes which could be divide into two categories: wafer processing which is FEOL (front-end-of-line) and chip packaging which is BEOL (back end of line), as it illustrated in Fig. 1. Wafer manufacturing is a process of exacting and refining high purity silicon (usually 99.999%) from silica; Wafer processing is depositing a thin film (among 100um to 22nm, according to the requirement and depending on technology) which contains required elements on the face of the original wafer; Dicing is chipping out wafer into little blockages to face different requirement; Assemble and packaging is fabricating chip into IC component. During the course of Wafer processing, the working condition is usually under low velocity, high vacuum and high temperature condition (depends on the characteristics of sediment), take the project Deposition of Hydrogenated Amorphous Silicon as an example---- 5.0 sccm, 11.0~16.0 mtor, and 250°C[1]. The performance of wafer is decided by the nature of reactors and the processing condition of which a little change would lead a different property of the production. Thus it is necessary and imperative to figure out the relationship among the factors influencing depositing process. And the most important among these factors are pressure, velocity, and temperature. In this paper, a method of pressure measurement based on a device of variable structure chamber for flowing experiment and testing will be introduced. Fig. 1, Semiconductor manufacturing process


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