Effects of interface mixing on adhesion of amorphous carbon films synthesized by variable-energy direct carbon ion beam deposition

2000 ◽  
Vol 18 (4) ◽  
pp. 1983-1986 ◽  
Author(s):  
M. H. Sohn ◽  
S. I. Kim
1981 ◽  
Vol 7 ◽  
Author(s):  
John C. Angus ◽  
Michael J. Mirtich ◽  
Edwin G. Wintucky

ABSTRACTCarbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 μm/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.


2000 ◽  
Vol 648 ◽  
Author(s):  
A.Yu. Belov ◽  
H.U. Jäger

AbstractAtomic-scale calculations were performed for the first time to investigate mechanical properties of amorphous carbon films grown by a realistic simulation of ion-beam deposition. The simulated films have a thickness of a few nanometers and reproduce the main structural features of real films, with the bulk content of sp3 bonded atoms varying from 35 to 95%, depending on the ion energy (E = 20-80 eV). Employing empirical interatomic potentials for carbon, the average bulk stresses as well as the atomic-level stress distributions were calculated and analysed. The bulk stresses were found to depend not only on the ion energy, but also on the film quality, in particular, on such structural inhomogeneities as local fluctuations of the sp3 fraction with the depth. The local variation of the bulk stress from the average value considerably increases as the local content of sp2 bonded atoms increases. Elastic constants of amorphous carbon films were also computed using the method of inner elastic constants, which allows for the stress dependence of elastic constants to be analysed. The variation of Young's modulus as a function of the lateral bulk stress in an amorphous film is demonstrated.


1999 ◽  
Vol 14 (6) ◽  
pp. 2668-2673 ◽  
Author(s):  
M. H. Sohn ◽  
S. I. Kim

Very thin (<,100 nm) amorphous carbon films were grown on silicon substrates by unfiltered and filtered direct carbon ion beams. In situ surface modification was performed using C- energies in the range of 300–500 eV prior to the growth of the film. By lowering the energy of the C− beam to 150 eV, an amorphous carbon film was continuously grown after the surface modification. High-resolution electron microscopy showed that the film/substrate interface was damaged by 400 and 500 eV C− beams. The carbon composition profile at the interface investigated by electron energy-loss spectroscopy illustrated that the 500 eV C− beam generated a 30 nm thick carbon/silicon mixing layer at the interface. The damage and mixing layers were not observed at 300 eV modification. Wear testing found that strong adhesion occurred in samples modified at 400 and 500 eV. However, at 300 eV, modified samples exhibited delamination failure, which indicated inferior adhesion of the films. Surface roughness evolution of 30, 60, and 90 nm thick films was investigated by atomic force microscopy. The film surface roughness decrease as a function of film thickness was much faster when the films were grown by the filtered C− beam.


1978 ◽  
Vol 25 (11) ◽  
pp. 1343-1343
Author(s):  
T. Furuse ◽  
T. Suzuki ◽  
S. Matsumoto ◽  
K. Nishida ◽  
Y. Nannichi

1992 ◽  
Vol 279 ◽  
Author(s):  
Sin-Shong Lin ◽  
Janes M. Sloan

ABSTRACTAmorphous carbon films were prepared by the ion beam deposition of methane saturated with silicon pump oil 704. The concentration of Si in the ion deposited coatings could be varied by the temperature of silicon oil bath where saturated vapor was produced. In the process, the vapor ionized at 800 V was accelerated and impinged on glass or stainless steel substrates at ion densities between 0.3–1.5 mA/cm2 for a period of less than 60 minutes. The resulting films were characterized by x-ray photoelectron and Raman spectroscopies. The elemental components of these films include carbon, oxygen and silicon with varying amounts of nitrogen, iron and tungsten contaminations. The microstructure mainly consists of tiny graphitic carbon with sp2 ordered and disordered configurations, numerous carbon-oxygen and carbon-silicon linkages. This simple unique process yields a homogeneous thin coating suitable for many tribological applications.


1998 ◽  
Vol 7 (1) ◽  
pp. 15-22 ◽  
Author(s):  
S. Christiansen ◽  
M. Albrecht ◽  
G. Frank ◽  
H.P. Strunk ◽  
C. Ronning ◽  
...  

1987 ◽  
Vol 61 (7) ◽  
pp. 2509-2515 ◽  
Author(s):  
Junzo Ishikawa ◽  
Yasuhiko Takeiri ◽  
Kiyoshi Ogawa ◽  
Toshinori Takagi

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