Characterization of Films Made from Silicon Oil Saturated Methane Vapor by Ion Beam

1992 ◽  
Vol 279 ◽  
Author(s):  
Sin-Shong Lin ◽  
Janes M. Sloan
Keyword(s):  
Saturated Vapor ◽  
Ion Beam ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Silicon Oil ◽  
Ion Beam Deposition ◽  
Steel Substrates ◽  
Beam Deposition

ABSTRACTAmorphous carbon films were prepared by the ion beam deposition of methane saturated with silicon pump oil 704. The concentration of Si in the ion deposited coatings could be varied by the temperature of silicon oil bath where saturated vapor was produced. In the process, the vapor ionized at 800 V was accelerated and impinged on glass or stainless steel substrates at ion densities between 0.3–1.5 mA/cm2 for a period of less than 60 minutes. The resulting films were characterized by x-ray photoelectron and Raman spectroscopies. The elemental components of these films include carbon, oxygen and silicon with varying amounts of nitrogen, iron and tungsten contaminations. The microstructure mainly consists of tiny graphitic carbon with sp2 ordered and disordered configurations, numerous carbon-oxygen and carbon-silicon linkages. This simple unique process yields a homogeneous thin coating suitable for many tribological applications.

Ion Beam Deposition of Amorphous Carbon Films With Diamond Like Properties

1981 ◽  
Vol 7 ◽  
Author(s):  
John C. Angus ◽  
Michael J. Mirtich ◽  
Edwin G. Wintucky
Keyword(s):  
Amorphous Carbon ◽  
Growth Rates ◽  
Random Network ◽  
Ion Beam ◽  
Potassium Bromide ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTCarbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 μm/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

Elastic Properties of Diamond-Like Amorphous Carbon Films Grown by Computer Simulation of Ion-Beam Deposition Process

2000 ◽  
Vol 648 ◽  
Author(s):  
A.Yu. Belov ◽  
H.U. Jäger
Keyword(s):  
Amorphous Carbon ◽  
Elastic Constants ◽  
Ion Beam ◽  
Carbon Films ◽  
Atomic Scale ◽  
Ion Energy ◽  
Amorphous Carbon Films ◽  
Ion Beam Deposition ◽  
Bulk Stress ◽  
Beam Deposition

AbstractAtomic-scale calculations were performed for the first time to investigate mechanical properties of amorphous carbon films grown by a realistic simulation of ion-beam deposition. The simulated films have a thickness of a few nanometers and reproduce the main structural features of real films, with the bulk content of sp3 bonded atoms varying from 35 to 95%, depending on the ion energy (E = 20-80 eV). Employing empirical interatomic potentials for carbon, the average bulk stresses as well as the atomic-level stress distributions were calculated and analysed. The bulk stresses were found to depend not only on the ion energy, but also on the film quality, in particular, on such structural inhomogeneities as local fluctuations of the sp3 fraction with the depth. The local variation of the bulk stress from the average value considerably increases as the local content of sp2 bonded atoms increases. Elastic constants of amorphous carbon films were also computed using the method of inner elastic constants, which allows for the stress dependence of elastic constants to be analysed. The variation of Young's modulus as a function of the lateral bulk stress in an amorphous film is demonstrated.

Stress relaxation and optical characterization of TiO2 and SiO2 films grown by dual ion beam deposition

2008 ◽  
Vol 516 (23) ◽  
pp. 8604-8608 ◽  
Author(s):  
C. Bundesmann ◽  
I.-M. Eichentopf ◽  
S. Mändl ◽  
H. Neumann
Keyword(s):  
Stress Relaxation ◽  
Ion Beam ◽  
Optical Characterization ◽  
Sio2 Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

The influence of substrate temperature during ion beam deposition on the diamond-like or graphitic nature of carbon films

1993 ◽  
Vol 2 (2-4) ◽  
pp. 285-290 ◽  
Author(s):  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
I. Avigal ◽  
C. Uzan-Saguy ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Influence Of Substrate ◽  
Beam Deposition

Growth of diamond and diamond-like films using a low energy ion beam

1998 ◽  
Vol 13 (8) ◽  
pp. 2315-2320 ◽  
Author(s):  
Y. P. Guo ◽  
K. L. Lam ◽  
K. M. Lui ◽  
R. W. M. Kwok ◽  
K. C. Hui
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Low Energy ◽  
Hydrogen Passivation ◽  
Heteroepitaxial Growth ◽  
Ion Beam Deposition ◽  
Additional Control ◽  
Strain Release ◽  
Beam Deposition

Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.

scholarly journals Growth and Characterization of NbTiN Films Synthesized by Reactive Bias Target Ion Beam Deposition (RBTIBD)

2019 ◽  
Vol 29 (5) ◽  
pp. 1-5 ◽  
Author(s):  
Michael E. Cyberey ◽  
Tannaz Farrahi ◽  
Michael Eller ◽  
Jiwei Lu ◽  
Robert M. Weikle ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Deposition ◽  
Beam Deposition

Preparation of diamondlike carbon films by high‐intensity pulsed‐ion‐beam deposition

1994 ◽  
Vol 76 (10) ◽  
pp. 5949-5954 ◽  
Author(s):  
Gregory P. Johnston ◽  
Prabhat Tiwari ◽  
Donald J. Rej ◽  
Harold A. Davis ◽  
William J. Waganaar ◽  
...  
Keyword(s):  
High Intensity ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Beam Deposition ◽  
Diamondlike Carbon ◽  
Beam Deposition

Voids Investigation of Amorphous Carbon Films Deposited by DC-Magnetron Sputtering: A Small Angle x-ray Scattering and Gas Thermal Effusion Study

1999 ◽  
Vol 593 ◽  
Author(s):  
F.L. Freire ◽  
L.G. Jacobsohn ◽  
D.F. Franceschini ◽  
S.S. Camargo
Keyword(s):  
Magnetron Sputtering ◽  
Amorphous Carbon ◽  
Small Angle ◽  
Ion Beam ◽  
Carbon Films ◽  
Dc Magnetron Sputtering ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

ABSTRACTAmorphous carbon films were deposited onto (100) Si crystals and onto ultra-pure Al foils by dc-magnetron sputtering with different Ar plasma pressures, from 0.17 to 1.4 Pa. We investigate the voids structure and the voids density in these films by means of small angle x-ray scattering (SAXS) and mass spectrometry of effused gases. The analysis of the effusion spectra provided clear evidence that films deposited at lower pressures are compact, while the films deposited at higher pressure present a more open structural arrangement, confirming density results obtained by using ion beam techniques. SAXS results reveal that the fraction of open volumes increases with the plasma pressure: a direct correlation between film density and open volume fraction is found. These different film microstructures could be explained by the existence of different bombarding regimes during film growth

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