Ga[sup +] focused-ion-beam exposure and CF[sub 4] reactive-ion-etching development of Si[sub 3]N[sub 4] resist optimized by Monte Carlo simulation
1998 ◽
Vol 16
(3)
◽
pp. 1161
◽
Keyword(s):
Ion Beam
◽
1998 ◽
Vol 16
(6)
◽
pp. 2982
◽
Keyword(s):