Ga[sup +] focused-ion-beam exposure and CF[sub 4] reactive-ion-etching development of Si[sub 3]N[sub 4] resist optimized by Monte Carlo simulation

Author(s):  
Hyun-Yong Lee
2006 ◽  
Vol 26 (2-3) ◽  
pp. 164-168 ◽  
Author(s):  
G. Villanueva ◽  
J.A. Plaza ◽  
A. Sánchez-Amores ◽  
J. Bausells ◽  
E. Martínez ◽  
...  

2010 ◽  
Vol 10 (1) ◽  
pp. 497-501 ◽  
Author(s):  
David Caballero ◽  
Guillermo Villanueva ◽  
Jose Antonio Plaza ◽  
Christopher A. Mills ◽  
Josep Samitier ◽  
...  

2008 ◽  
Vol 18 (3) ◽  
pp. 035003 ◽  
Author(s):  
H X Qian ◽  
Wei Zhou ◽  
Jianmin Miao ◽  
Lennie E N Lim ◽  
X R Zeng

2019 ◽  
Vol 1 (9) ◽  
pp. 3584-3596 ◽  
Author(s):  
Kyle T. Mahady ◽  
Shida Tan ◽  
Yuval Greenzweig ◽  
Amir Raveh ◽  
Philip D. Rack

Successful development of a Monte Carlo simulation that accurately emulates gas assisted nanoscale focused ion beam etching.


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