scholarly journals Monte Carlo simulation of nanoscale material focused ion beam gas-assisted etching: Ga+ and Ne+ etching of SiO2 in the presence of a XeF2 precursor gas

2019 ◽  
Vol 1 (9) ◽  
pp. 3584-3596 ◽  
Author(s):  
Kyle T. Mahady ◽  
Shida Tan ◽  
Yuval Greenzweig ◽  
Amir Raveh ◽  
Philip D. Rack
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Successful Development ◽  
Nanoscale Material ◽  
Ion Beam Etching

Successful development of a Monte Carlo simulation that accurately emulates gas assisted nanoscale focused ion beam etching.

Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1597-1599 ◽  
Author(s):  
D. Kunder ◽  
E. Baer ◽  
M. Sekowski ◽  
P. Pichler ◽  
M. Rommel
Keyword(s):  
Monte Carlo ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Sputtering Yield

Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

2011 ◽  
Vol 7 (4) ◽  
pp. 594-597
Author(s):  
Zhan-Shuo Hu ◽  
Fei-Yi Hung ◽  
Shoou-Jinn Chang ◽  
Bohr-Ran Huang ◽  
Bo-Cheng Lin ◽  
...  
Keyword(s):  
Field Emission ◽  
Growth Mechanism ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Emission Characteristics ◽  
Ion Beam Etching
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