Effect of temperature on the threshold current and wavelength of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) diode lasers

1995 ◽  
Author(s):  
Michael M. Dion ◽  
Mahmoud Fallahi ◽  
F. Chatenoud ◽  
Ian M. Templeton ◽  
Andre Delage ◽  
...  
2001 ◽  
Vol 199 (5-6) ◽  
pp. 417-424 ◽  
Author(s):  
Konrad Świtalski ◽  
Anna Tyszka-Zawadzka ◽  
Paweł Szczepański

Author(s):  
А.В. Бабичев ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
С.А. Блохин ◽  
...  

AbstractThe results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.


2011 ◽  
Author(s):  
C. Fiebig ◽  
S. Pekarek ◽  
K. Paschke ◽  
M. Uebernickel ◽  
T. Südmeyer ◽  
...  

2000 ◽  
Vol 76 (19) ◽  
pp. 2653-2655 ◽  
Author(s):  
H. Wenzel ◽  
A. Klehr ◽  
G. Erbert ◽  
J. Sebastian ◽  
G. Tränkle ◽  
...  

2012 ◽  
Vol 20 (21) ◽  
pp. 23374 ◽  
Author(s):  
David Feise ◽  
Wilfred John ◽  
Frank Bugge ◽  
Christian Fiebig ◽  
Gunnar Blume ◽  
...  

1988 ◽  
Vol 63 (11) ◽  
pp. 5603-5606 ◽  
Author(s):  
Y. Shani ◽  
R. Rosman ◽  
A. Katzir ◽  
P. Norton ◽  
M. Tacke ◽  
...  

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