scholarly journals Вертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания

Author(s):  
А.В. Бабичев ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
С.А. Блохин ◽  
...  

AbstractThe results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

Author(s):  
Н.Н. Леденцов ◽  
В.А. Щукин ◽  
V.P. Kalosha ◽  
N.N. Ledentsov, Jr. ◽  
J.R. Kropp ◽  
...  

AbstractVertical-cavity surface-emitting lasers (VCSELs) with an aperture limited by an oxide and a resonance cavity based on GaAlAs with high Al content provide a maximum γ factor (λ/2 design) and suppression of optical power beyond the aperture. A VCSEL with two coupled cavities provides additional sharp growth of the loss of high-order lateral modes by leakage to the oxidized region and provides single-mode laser generation for an aperture diameter of up to 5 μm. Single-mode antiwaveguiding VCSELs provide ultrafast data transmission with a rate of up to 160 Gbit/s. The structure in which the active medium is placed in the lower distributed Bragg reflector and the cavity and the upper distributed Bragg reflector are dielectric, reducing the temperature shift of the radiation wavelength by a factor of 2 (to ∼0.03 nm/K).


2011 ◽  
Vol 383-390 ◽  
pp. 6283-6288 ◽  
Author(s):  
Mohamad Yazdanypoor ◽  
Asghar Gholami

Influence of using two oxide layers in the both sides of active layer with different position and aperture size on Vertical Cavity Surface Emitting Laser (VCSEL) performance is analyzed showing effects on the output power, single mode operation and threshold current. In addition, for improving speed we use ion implant area along with thick oxide layer to minimize parasitic elements. As the result, the proposed design exhibits much better stability of the fundamental mode over a wider current range, much higher output power, lower threshold current, than the conventional one with a high frequency response.


1993 ◽  
Vol 29 (6) ◽  
pp. 1895-1905 ◽  
Author(s):  
K.M. Dzurko ◽  
A. Hardy ◽  
D.R. Scifres ◽  
D.F. Welch ◽  
R.G. Waarts ◽  
...  

Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
А.А. Блохин ◽  
А.П. Васильев ◽  
А.Г. Кузьменков ◽  
...  

Vertical-cavity surface-emitting lasers emitting at the spectral range of 1.55 µm based on heterostructures with a buried tunnel junction (BTJ) with a height step of 15 nm are studied. The devices are realized using wafer fusion technique of heterostructures grown by molecular beam epitaxy and demonstrate a single-mode lasing regime at the 8 μm BTJ-diameter. With a decrease in the BTJ-diameter, a sharp increase in the threshold current, accompanied by an abrupt increase in the output optical power and resonance frequency at the lasing threshold are observed. Stable single-mode lasing is due to the smoothing of the boundary of the overgrown surface relief, which leads to a smooth change in the profile of the effective refractive index in the lateral direction, while maintaining effective current confinement, which makes it possible to significantly reduce the transverse optical confinement factor for high-order modes even at large BTJ-diameter. However, at small BTJ-diameter, it also leads to the formation of a saturable absorber in the non-pumped parts of the active region.


1993 ◽  
Vol 5 (6) ◽  
pp. 695-697 ◽  
Author(s):  
O. Blum ◽  
J.E. Zucker ◽  
X. Wu ◽  
K.H. Gulden ◽  
H. Sohn ◽  
...  

2000 ◽  
Vol 17 (2) ◽  
pp. 109-111 ◽  
Author(s):  
Yi-Yuan Xue ◽  
Hong-Lin An ◽  
Li-Bin Fu ◽  
Xiang-Zhi Lin ◽  
Hong-Du Liu

Nanoscale ◽  
2021 ◽  
Vol 13 (37) ◽  
pp. 15830-15836
Author(s):  
Ahmad Syazwan Ahmad Kamal ◽  
Cheng-Chieh Lin ◽  
Di Xing ◽  
Yang-Chun Lee ◽  
Zhiyu Wang ◽  
...  

A newly developed lithographic in-mold patterning process is proposed to fabricate on-chip single-mode distributed-Bragg-reflector waveguide small lasers that utilized CsPbBr3 perovskite nanocrystals as the gain material.


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