Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells

Author(s):  
Yongkun Sin ◽  
Mark Peterson ◽  
Zachary Lingley ◽  
Stephen LaLumondiere ◽  
Steven C. Moss ◽  
...  
2014 ◽  
Vol 1635 ◽  
pp. 55-62
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Nathan Wells ◽  
Zachary Lingley ◽  
Nathan Presser ◽  
...  

ABSTRACTHigh performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.


2021 ◽  
Vol 118 (18) ◽  
pp. 181101
Author(s):  
Jia Ding ◽  
Cheng-Ying Tsai ◽  
Zheng Ju ◽  
Yong-Hang Zhang

2013 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
Tae Wan Kim ◽  
...  

2015 ◽  
Vol 49 (2) ◽  
pp. 025103 ◽  
Author(s):  
Seunga Lee ◽  
Yoshio Honda ◽  
Hiroshi Amano

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.


2021 ◽  
pp. 389-429
Author(s):  
Mohd T. Khan ◽  
Abdullah Almohammedi ◽  
Samrana Kazim ◽  
Shahzada Ahmad

2016 ◽  
Vol 28 ◽  
pp. 275-280 ◽  
Author(s):  
Yang Li ◽  
Zheng Xu ◽  
Suling Zhao ◽  
Di Huang ◽  
Ling Zhao ◽  
...  

2018 ◽  
Vol 11 (7) ◽  
pp. 072301 ◽  
Author(s):  
Naoya Miyashita ◽  
Benoît Behaghel ◽  
Jean-François Guillemoles ◽  
Yoshitaka Okada

2018 ◽  
Vol 57 (8S3) ◽  
pp. 08RF03 ◽  
Author(s):  
Tatsuya Nakata ◽  
Kentaroh Watanabe ◽  
Naoya Miyashita ◽  
Hassanet Sodabanlu ◽  
Maxime Giteau ◽  
...  

2017 ◽  
Vol 19 (3) ◽  
pp. 2549-2556 ◽  
Author(s):  
Yang Li ◽  
Junting Wang ◽  
Yi Yuan ◽  
Min Zhang ◽  
Xiandui Dong ◽  
...  

Two perylene dyes characteristic of electron-donors phenanthrocarbazole (PC) and carbazyl functionalized PC are selected to study the complicated dynamics of excited states and charge carriers, which underlie the photovoltaic parameters of dye-sensitized solar cells (DSCs).


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