Absorption of a heralded single photon by a nitrogen-vacancy center in diamond (Conference Presentation)

Author(s):  
Maria Gieysztor ◽  
Marta Misiaszek ◽  
Joscelyn van der Veen ◽  
Wojciech Gawlik ◽  
Fedor Jelezko ◽  
...  
2018 ◽  
Vol 924 ◽  
pp. 281-284 ◽  
Author(s):  
Yuta Abe ◽  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Shinobu Onoda ◽  
Moriyoshi Haruyama ◽  
...  

We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSsonlyin 4H-SiC/SiO2interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2interfaces.


2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Yuya Yonezu ◽  
Kentaro Wakui ◽  
Kentaro Furusawa ◽  
Masahiro Takeoka ◽  
Kouichi Semba ◽  
...  

2014 ◽  
Vol 105 (7) ◽  
pp. 073113 ◽  
Author(s):  
Roland Albrecht ◽  
Alexander Bommer ◽  
Christoph Pauly ◽  
Frank Mücklich ◽  
Andreas W. Schell ◽  
...  

2020 ◽  
Author(s):  
Maria Gieysztor ◽  
Marta Misiaszek ◽  
Joscelyn van der Veen ◽  
Wojciech Gawlik ◽  
Fedor Jelezko ◽  
...  

Nanoscale ◽  
2017 ◽  
Vol 9 (45) ◽  
pp. 17902-17908 ◽  
Author(s):  
Hamidreza Siampour ◽  
Shailesh Kumar ◽  
Sergey I. Bozhevolnyi

We demonstrate a chip-integrated cavity for the selective enhancement of single photon emission from a diamond color center coupled to a plasmonic waveguide mode.


Optica ◽  
2017 ◽  
Vol 4 (1) ◽  
pp. 71 ◽  
Author(s):  
Beatrice Rodiek ◽  
Marco Lopez ◽  
Helmuth Hofer ◽  
Geiland Porrovecchio ◽  
Marek Smid ◽  
...  

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