Optical absorption studies of (Ga0.1In0.9)2Se3 thin film

Author(s):  
Ihor P. Studenyak ◽  
Mladen Kranjčec ◽  
Viktor I. Studenyak ◽  
Vitalii Izai ◽  
Ryszard Romaniuk ◽  
...  
2011 ◽  
Vol 403-408 ◽  
pp. 1089-1093
Author(s):  
Jian Sheng Xie ◽  
Jin Hua Li ◽  
Luan Ping

Thin CuInSi nanocomposite films were prepared by magnetron co-sputtering. The structures of CuInSi nanocomposite films were detected by X-ray diffraction(XRD); XRD studies of the annealed films indicate the presence of CuInSi, the main crystal phase peak is at 2θ=42.400°. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi.


2012 ◽  
Vol 433-440 ◽  
pp. 302-305
Author(s):  
Jian Sheng Xie ◽  
Jin Hua Li ◽  
Ping Luan

Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.


1985 ◽  
Vol 10 (1-2) ◽  
pp. 93-96
Author(s):  
S.B.S. Sastry ◽  
S. Nagarajan ◽  
G. Muralidharan

2002 ◽  
Vol 100 (1) ◽  
pp. 471-474 ◽  
Author(s):  
G. M. Ferraz ◽  
S. Watanabe ◽  
S. O. Souza ◽  
R. M. F. Scalvi

2006 ◽  
Vol 30 (1) ◽  
pp. 75-83 ◽  
Author(s):  
H. Paşaoĝlu ◽  
B. Karabulut ◽  
G. Kaştaş ◽  
R. Tapramaz ◽  
A. Karadaĝ

2013 ◽  
Vol 22 (4) ◽  
pp. 045202 ◽  
Author(s):  
Feng-Xiang Chen ◽  
Li-Sheng Wang ◽  
Wen-Ying Xu

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