On the resolution characterization of THz and MMW FPA-based active imaging systems

Author(s):  
François Berthiaume ◽  
Alex Paquet ◽  
Michel Doucet ◽  
Frédéric Emond ◽  
Linda Marchese
2012 ◽  
Vol 102 (1-3) ◽  
pp. 56-72 ◽  
Author(s):  
David MacKinnon ◽  
Benjamin Carrier ◽  
Jean-Angelo Beraldin ◽  
Luc Cournoyer

2011 ◽  
Vol 1 (1) ◽  
pp. 183-200 ◽  
Author(s):  
Fabian Friederich ◽  
Wolff von Spiegel ◽  
Maris Bauer ◽  
Fanzhen Meng ◽  
Mark D. Thomson ◽  
...  

2019 ◽  
Vol 8 (6) ◽  
pp. 461-467
Author(s):  
Thomas Scholz ◽  
Martin Laurenzis ◽  
Frank Christnacher

Abstract Underwater laser-based imaging systems and data-processing techniques matured during the past decade. Active imaging systems can, nowadays, be integrated into platforms like remote-operated vehicles (ROV) or autonomous underwater vehicles (AUV). This article gives an overview of different civil and naval applications in underwater imaging with respect to underwater laser scanning (ULS) and laser gated viewing (LGV). Special emphasis has to be given to the environmental conditions, for example, the influence of the local and seasonal dependence of the turbidity with regard to the optical underwater channel. On the basis of tank and sea experiments, advanced techniques for 3D laser oblique scanning (LOS) and possibilities of contrast enhancements for gated viewing are presented.


1992 ◽  
Author(s):  
Philip D. Henshaw ◽  
Norman R. Guivens, Jr.

Author(s):  
H. Zuo ◽  
R.D. Griffin ◽  
G.M. Janowski ◽  
R.N. Andrews

The II-VI semiconducting compounds are of particular interest due to the ability to compositionally tune them to detect infrared radiation in the 0.5 to 30 μm range. With the demand for advanced imaging systems, there is an immediate need for bulk II-VI materials with improved compositional homogeneity and structural perfection. The performance of optical semiconductors is very sensitive to the presence of defects such as dislocations, precipitates, and boundaries.


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