Research progress on preparation methods and photoelectric properties of perovskite solar cell

2021 ◽  
Author(s):  
Yixuan Li
2019 ◽  
Vol 68 (15) ◽  
pp. 158806
Author(s):  
Ji-Ming Wang ◽  
Ke Chen ◽  
Wei-Guang Xie ◽  
Ting-Ting Shi ◽  
Peng-Yi Liu ◽  
...  

Author(s):  
Yongjin Long ◽  
Chenyang Wang ◽  
Xiaohui Liu ◽  
Jiahao Wang ◽  
Shiqiang Fu ◽  
...  

The all-inorganic CsPbIBr2 perovskite solar cell (PSC) has received tremendous attention due to its favorable photoelectric properties and superior stability against moisture and heat attack. Nevertheless, the reported power conversion...


CrystEngComm ◽  
2020 ◽  
Vol 22 (5) ◽  
pp. 851-869 ◽  
Author(s):  
Wen Zeng ◽  
Nan Chen ◽  
Weiguang Xie

Accompanied with drastic changes in photoelectric properties, vanadium dioxide (VO2) exhibits a first order metal–insulator phase transition (MIT) at the temperature of about 68 °C.


2021 ◽  
Vol 17 ◽  
Author(s):  
Wanzhe Tong ◽  
Qinhong Yin ◽  
Dong Fang ◽  
Taofang Zeng ◽  
Jianhong Yi

: Silicon quantum dots (Si QDs) with the unique properties in light, electricity, magnetism and heat possess the advantages of non-toxic, environmental protection and abundant reserves. They are widely used in various fields and have great potential for development. Till now, numerous researchers have reported the research progress of Si QDs, or elaborated the behavior mechanism. However, there are few summarization and comparison on the properties of quantum dot properties in different fields and different preparation methods. Besides, the parameters of Si QDs vary greatly in different application fields, which is worthy of comparison and summary. During the current work, we review the research progress and synthesis methods in recent years. The main influencing factors of Si QDs of different preparation methods (physical and chemical) and different application properties (fluorescence detection, solar cell, photocatalyst and composite) are compared and discussed in detail. Therefore, this paper aims to find promising preparation methods for different application fields, and to provide a clear direction for researchers to study Si QDs in different directions.


2019 ◽  
Author(s):  
Evelyne Knapp ◽  
Andreas Schiller ◽  
Martin T. Neukom ◽  
Simon Züfle ◽  
Beat Ruhstaller

2018 ◽  
Author(s):  
Pei-Ying Lin ◽  
Ming-Hsien Li ◽  
Yu-Hsien Chiang ◽  
Po-Shen Shen ◽  
Peter Chen

2018 ◽  
Author(s):  
F. Javier Ramos ◽  
Jean Rousset ◽  
Jorge Posada ◽  
Adrien Bercegol ◽  
Amelle Rebai ◽  
...  

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