Secondary-electron image profiles using bias voltage technique in deep contact hole

Author(s):  
Yeong-Uk Ko ◽  
David C. Joy ◽  
Neal T. Sullivan ◽  
Martin E. Mastovich

2010 ◽  
Vol 1250 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Tatsuya Makino ◽  
Yoda Takatoshi ◽  
Dobashi Kazufumi ◽  
Kishida Satoru

AbstractBoth a low resistance state and a high resistance state which were written by the voltage application in a local region of NiO/Pt films by using conducting atomic force microscopy (C-AFM) were observed by using scanning electron microscope (SEM) and electron probe micro analysis (EPMA). The writing regions are distinguishable as dark areas in a secondary electron image and thus can be specified without using complicated sample fabrication process to narrow down the writing regions such as the photolithography technique. In addition, the writing regions were analyzed by using energy dispersive X-ray spectroscopy (EDS) mapping. No difference between the inside and outside of the writing regions is observed for all the mapped elements including C and Rh. Here, C and Rh are the most probable candidates for contamination which affect the secondary electron image. Therefore, our results suggested that the observed change in the contrast of the second electron image is related to the intrinsic change in the electronic state of the NiO film and a secondary electron yield is correlated to the physical properties of the film.





1992 ◽  
Vol 128 (1) ◽  
pp. 243-248 ◽  
Author(s):  
Ludmila Kokhanchik ◽  
Alexey Nikulov ◽  
Anatoly Chernykh




2012 ◽  
Vol 123 ◽  
pp. 66-73 ◽  
Author(s):  
Lijun Wu ◽  
R.F. Egerton ◽  
Yimei Zhu


2018 ◽  
Vol 24 (S1) ◽  
pp. 1514-1515
Author(s):  
Kei-ichi Fukunaga ◽  
Noriaki Endo ◽  
Shuji Kawai ◽  
Takashi Suzuki ◽  
Eiji Okunishi ◽  
...  


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