scholarly journals Energy Selected Secondary Electron Image Revealing Surface Potential by High Accelerating Voltage Scanning Electron Microscope

2018 ◽  
Vol 24 (S1) ◽  
pp. 1514-1515
Author(s):  
Kei-ichi Fukunaga ◽  
Noriaki Endo ◽  
Shuji Kawai ◽  
Takashi Suzuki ◽  
Eiji Okunishi ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Surface Potential ◽  
Secondary Electron ◽  
Secondary Electron Image ◽  
Electron Image ◽  
Voltage Scanning ◽  
Scanning Electron

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

A Means to Overcome the Contrast Difficulties Inherent to Scanning Electron Microscopy

1970 ◽  
Vol 28 ◽  
pp. 394-395
Author(s):  
Arthur J. Saffir ◽  
Tyler A. Woolley ◽  
Nelson Yew
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Three Dimensional ◽  
Secondary Electrons ◽  
Conductive Coatings ◽  
Electron Image ◽  
Scanning Electron

The secondary electron image of the scanning electron microscope is similar to a light image of a three dimensional specimen. These two forms of "illumination", light and secondary electrons, have in common a contrast characteristic that makes photography or SEM micrography difficult. .. a tendency toward extreme highlights. The photographer encounters this phenomenon if his subject has a shiny surface, e.g., an automobile bumper. He overcomes this problem with dulling spray to suppress the undesirable highlights (reflections).This problem is also common in SEM studies, especially with biological specimens of poor conductivity. It is undesirable or impossible to subject thermolabile or living specimens to the deposition of conductive coatings.

Quality of the Secondary Electron Image at Low Accelerating Voltage

1970 ◽  
Vol 28 ◽  
pp. 390-391
Author(s):  
T. Kosuge ◽  
H. Hashimoto ◽  
M. Sato ◽  
S. Kimoto
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Image Quality ◽  
Electron Probe ◽  
Secondary Electron ◽  
Secondary Electron Image ◽  
Electron Image ◽  
Image Detail ◽  
Scanning Electron

A scanning electron microscope is usually operated at the accelerating voltage of 25 kV or so. The use of a lower accelerating voltage has many advantages to improve the image quality, such as presentation of fine details of the specimen surface, the prevention of the charge-up and that of the damage to the specimen by electron beam bombardment. In this paper, the quality of the secondary electron image is discussed under various accelerating voltages between 1 and 25 kV.As far it is considered that the limit of the resolution of a secondary electron image is only depend on the diameter of the incident electron probe, the higher accelerating voltage is prefered. Attainable resolutions in this experiment for various voltages are shown in Figure 1. However, as shown in Figure 2 most of the secondary electron images in which a critical resolution is not necessary reveal fine image detail with better contrast at lower voltages.

Resolution of a Transmitted Electron Image Formed by A Scanning Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 386-387
Author(s):  
S. Takashima ◽  
H. Hashimoto ◽  
S. Kimoto
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Specimen Thickness ◽  
Probe Diameter ◽  
Transmission Electron ◽  
Electron Image ◽  
Conventional Transmission Electron Microscope ◽  
Scanning Electron

The resolution of a conventional transmission electron microscope (TEM) deteriorates as the specimen thickness increases, because chromatic aberration of the objective lens is caused by the energy loss of electrons). In the case of a scanning electron microscope (SEM), chromatic aberration does not exist as the restrictive factor for the resolution of the transmitted electron image, for the SEM has no imageforming lens. It is not sure, however, that the equal resolution to the probe diameter can be obtained in the case of a thick specimen. To study the relation between the specimen thickness and the resolution of the trans-mitted electron image obtained by the SEM, the following experiment was carried out.

Magnetic Domain Observation of an Amorphous Fe-Si-B Ribbon by Means of a High Voltage Scanning Electron Microscope

1981 ◽  
Vol 39 ◽  
pp. 320-321
Author(s):  
K. Tsuno ◽  
Y. Harada ◽  
T. Sato
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
High Voltage ◽  
Amorphous Ribbon ◽  
Image Resolution ◽  
Objective Lens ◽  
Magnetic Domains ◽  
Scattered Electron ◽  
Voltage Scanning ◽  
Scanning Electron

Magnetic domains of ferromagnetic amorphous ribbon have been observed using Bitter powder method. However, the domains of amorphous ribbon are very complicated and the surface of ribbon is not flat, so that clear domain image has not been obtained. It has been desired to observe more clear image in order to analyze the domain structure of this zero magnetocrystalline anisotropy material. So, we tried to observe magnetic domains by means of a back-scattered electron mode of high voltage scanning electron microscope (HVSEM).HVSEM method has several advantages compared with the ordinary methods for observing domains: (1) high contrast (0.9, 1.5 and 5% at 50, 100 and 200 kV) (2) high penetration depth of electrons (0.2, 1.5 and 8 μm at 50, 100 and 200 kV). However, image resolution of previous HVSEM was quite low (maximum magnification was less than 100x), because the objective lens cannot be excited for avoiding the application of magnetic field on the specimen.

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

scholarly journals Coloring Pictures for Electron Microscopists or Elements of Digital Image Manipulation for Students

2008 ◽  
Vol 16 (4) ◽  
pp. 62-63
Author(s):  
V.M. Dusevich ◽  
J.H. Purk ◽  
J.D. Eick
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Digital Image ◽  
Secondary Electron ◽  
Image Manipulation ◽  
Sem Micrographs ◽  
Backscattered Electrons ◽  
Digital Picture ◽  
Scanning Electron

Coloring pictures is an educational exercise, which is fun, and helps develop important skills. Coloring SEM micrographs is especially suitable for electron microscopists. Color micrographs are not just great looking on a lab wall; they inspire both microscopists and students to exercise digital picture manipulation. Many microscopists enjoyed looking at the beautiful color micrographs by D. Scharf, but were frustrated to learn they needed a very particular scanning electron microscope equipped with multiple secondary electron detectors in order to color their own pictures. Fortunately, there are other ways to color SEM micrographs. Most SEMs are equipped with at least two detectors, for secondary and backscattered electrons.

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