Optical properties of oxide films prepared by ion-beam-sputter deposition

1991 ◽  
Author(s):  
Xuefei Tang ◽  
Zhengxiu Fan ◽  
ZhiJiang Wang
2020 ◽  
Vol 56 (1) ◽  
pp. 615-628 ◽  
Author(s):  
Mario Gies ◽  
Fabian Michel ◽  
Christian Lupó ◽  
Derck Schlettwein ◽  
Martin Becker ◽  
...  

Abstract Chromogenic thin films are crucial building blocks in smart windows to modulate the flux of visible light and heat radiation into buildings. Electrochromic materials such as tungsten oxide are well established in those devices. Sputter deposition offers a well-suited method for the production of such layers, which can also be used on an industrial scale. Tungsten oxide films were prepared by means of reactive ion-beam sputter deposition. The choice of distinct gas mixtures as well as the growth temperature during the sputtering process allows to tune the properties of the resulting layers. Especially, the variation in the growth temperatures was found to have an impact on the structure of the resulting samples and, as a consequence, on their optical and electrochemical properties. By specific choice of the reactive gas, the deposition of colorless transparent as well as blue films of different composition is possible. The optical transmittance in the visible spectral range was up to 75% for as-deposited oxygen-rich layers. Additionally, hydrogen-doped tungsten oxide samples were grown. Superior electrochromic switching was observed for H$$^{+}$$ + -doped layers, probably by some kind of preconditioning. This resulted in a value for the standardized optical coloration efficiency of 26.5 cm$$^{2}$$ 2 /C.


2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Jin-Cherng Hsu ◽  
Yueh-Sheng Chiang

In this study, zinc oxide films were deposited by an ion-beam sputter deposition in various oxygen partial pressures at room temperature. The films changed the structures from amorphous to polycrystalline with increasing the oxygen partial pressure (). The optimal was found at Torr because the film prepared at the oxygen partial pressure had the lowest resistivity and the highest transparence in the visible light region. The lowest resistivity results from a great number of oxygen vacancy sites formed on the polycrystalline surface as exposed to the atmosphere. Moreover, the film has the highest XRD peak intensity, smallest FWHM diffraction peak, smallest -spacing, and smallest biaxial stress.


1996 ◽  
Vol 290-291 ◽  
pp. 88-93 ◽  
Author(s):  
Cheng-Chung Lee ◽  
David T. Wei ◽  
Jin-Cherng Hsu ◽  
Chan-Han Shen

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Ching-Hsiu Chen ◽  
Assamen Ayalew Ejigu ◽  
Liang-Chiun Chao

Cu2O has been deposited on quartz substrates by reactive ion beam sputter deposition. Experimental results show that by controlling argon/oxygen flow rates, both n-type and p-type Cu2O samples can be achieved. The bandgap of n-type and p-type Cu2O were found to be 2.3 and 2.5 eV, respectively. The variable temperature photoluminescence study shows that the n-type conductivity is due to the presence of oxygen vacancy defects. Both samples show stable photocurrent response that photocurrent change of both samples after 1,000 seconds of operation is less than 5%. Carrier densities were found to be 1.90 × 1018 and 2.24 × 1016 cm−3 for n-type and p-type Cu2O, respectively. Fermi energies have been calculated, and simplified band structures are constructed. Our results show that Cu2O is a plausible candidate for both photoanodic and photocathodic electrode materials in photoelectrochemical application.


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