Magnetic field effect on terahertz emission from InAs surface excited by femtosecond laser pulses

Author(s):  
P. A. Ziaziulia ◽  
V. N. Belyi ◽  
V. L. Malevich ◽  
I. S. Manak
2017 ◽  
Vol 50 (5) ◽  
pp. 055101 ◽  
Author(s):  
A Arlauskas ◽  
L Subačius ◽  
A Krotkus ◽  
V L Malevich

2016 ◽  
Vol 55 (4) ◽  
Author(s):  
Ignas Nevinskas ◽  
Sandra Stanionytė ◽  
Vaidas Pačebutas ◽  
Arūnas Krotkus

Lattice-matched GaInAs p-i-n diodes of different i-region thicknesses have been MBE grown on n-type InP (100) and (111) crystallographic orientation substrates. It has been found that terahertz emission from such structures when illuminated with femtosecond laser pulses can be more efficient than that from the known to date best surface terahertz emitter (111) p-InAs. The explanation of the terahertz generation mechanism from p-i-n diodes is based on ultrafast photocurrent effects. Anisotropic transient photocurrents causing the 3ϕ azimuthal angle dependence are observed in the sample on (111) substrate. These p-i-n structures allow covering a technologically important 1.55 μm range and may provide controllability and compactness of a THzTDS system when biased with an external voltage source.


2007 ◽  
Vol 2 (1) ◽  
pp. 108-114 ◽  
Author(s):  
A. Krotkus ◽  
R. Adomavičius ◽  
G. Molis ◽  
V. L. Malevich

2001 ◽  
Vol 40 (9) ◽  
pp. 1369 ◽  
Author(s):  
Shingo Ono ◽  
Takeyo Tsukamoto ◽  
Eiji Kawahata ◽  
Takayuki Yano ◽  
Hideyuki Ohtake ◽  
...  

2011 ◽  
Vol 102 (3) ◽  
pp. 551-554 ◽  
Author(s):  
F. Garwe ◽  
A. Schmidt ◽  
G. Zieger ◽  
T. May ◽  
K. Wynne ◽  
...  

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