Reverse polarization switching in ferroelectric lead zirconate titanate (PZT) thin films

2008 ◽  
Author(s):  
William S. Oates
1991 ◽  
Vol 74 (6) ◽  
pp. 1455-1458 ◽  
Author(s):  
Altaf H. Carim ◽  
Bruce A. Tuttle ◽  
Daniel H. Doughty ◽  
Sheri L. Martinez

2013 ◽  
Vol 21 (11) ◽  
pp. 2893-2899 ◽  
Author(s):  
张翊 ZHANG Yi ◽  
潘峰 PAN Feng ◽  
包达群 BAO Da-qun ◽  
王建艳 WANG Jian-yan ◽  
郭航 GUO Hang

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 944
Author(s):  
Youcao Ma ◽  
Jian Song ◽  
Xubo Wang ◽  
Yue Liu ◽  
Jia Zhou

Compared to aluminum nitride (AlN) with simple stoichiometry, lead zirconate titanate thin films (PZT) are the other promising candidate in advanced micro-electro-mechanical system (MEMS) devices due to their excellent piezoelectric and dielectric properties. The fabrication of PZT thin films with a large area is challenging but in urgent demand. Therefore, it is necessary to establish the relationships between synthesis parameters and specific properties. Compared to sol-gel and pulsed laser deposition techniques, this review highlights a magnetron sputtering technique owing to its high feasibility and controllability. In this review, we survey the microstructural characteristics of PZT thin films, as well as synthesis parameters (such as substrate, deposition temperature, gas atmosphere, and annealing temperature, etc.) and functional proper-ties (such as dielectric, piezoelectric, and ferroelectric, etc). The dependence of these influential factors is particularly emphasized in this review, which could provide experimental guidance for researchers to acquire PZT thin films with expected properties by a magnetron sputtering technique.


2001 ◽  
Vol 37 (1-4) ◽  
pp. 67-74 ◽  
Author(s):  
George McLane ◽  
Ronald Polcawich ◽  
Jeffrey Pulskamp ◽  
Brett Piekarski ◽  
Madan Dubey ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document