Effect of deposition pressure on structural and optical properties of scandium-doped ZnO thin film prepared by sputtering

2009 ◽  
Author(s):  
Cunxing Miao ◽  
Zhanxia Zhao ◽  
Min Li ◽  
Zhongquan Ma
2015 ◽  
Vol 727-728 ◽  
pp. 280-283
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu

Al doped ZnO thin film have been prepared by a sol-gel method. The structural, and optical properties of the sample were investigated. X-ray diffraction and X-ray absorption spectroscopy analyses and UV absorption spectroscopy analyses indicate that Al3+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping, the visible emission increased and the UV emission decreased, which is attributed to the increase of O vacancies and Zn interstitials.


2019 ◽  
Vol 6 (11) ◽  
pp. 115901 ◽  
Author(s):  
Fucheng Yu ◽  
Tianyun Song ◽  
Bolong Wang ◽  
Boyu Xu ◽  
Haishan Li ◽  
...  

2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.


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