Er-doped Tellurite glasses for planar waveguide power amplifier with extended gain bandwidth

Alkaline tellurite glasses within composition of 65TeO2–9Nb2O5–5Li2O–15LiCl–5PbO–1.0La2O3 xEr2O3 ions doped (where x is 0, 20000, 25000 and 30000 ppm) have been prepared by the quenching melting method. Herein, parameters such as Judd–Ofelt, Ωt (t = 2, 4, 6) has been estimated. Transfer probabilities quality factors, magnetic and electric radiative oscillator strength fluorescence are used for a number of different excited states. Moreover, the structure of prepared glasses was investigated using Raman spectra. Physical and spectroscopic characterizations of Er3+ doped these glasses, which imply that we can fabricate them as potential candidates for optical application.

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A Nd:YAG planar waveguide laser operating at 121W output with face-pumping by diode bars, and its use as a power amplifier

Advanced Solid-State Lasers ◽

10.1364/assl.2001.tuc3 ◽

2001 ◽

Cited By ~ 1

Author(s):

J.R. Lee ◽

G.J. Friel ◽

HJ. Baker ◽

G J Hilton ◽

D.R. Hall

Keyword(s):

Power Amplifier ◽

Planar Waveguide ◽

Waveguide Laser

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Analysis and design of a high-gain 100–180-GHz differential power amplifier in 130 nm SiGe BiCMOS

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078716001458 ◽

2017 ◽

Vol 9 (6) ◽

pp. 1231-1239

Author(s):

Faisal Ahmed ◽

Muhammad Furqan ◽

Klaus Aufinger ◽

Andreas Stelzer

Keyword(s):

Output Power ◽

Power Amplifier ◽

High Gain ◽

Small Signal ◽

Gain Bandwidth ◽

Band Frequency ◽

Analysis And Design ◽

Differential Gain ◽

Bicmos Technology ◽

Sige Bicmos

This paper presents the design and measurement results of a high-gain D-band broadband power amplifier (PA) implemented in a 130 nm SiGe BiCMOS technology. The topology of the PA is based on four differential cascode stages with interstage matching networks. A detailed analysis of the frequency behavior of the transimpedance-gain of the common-base stage of the cascode is presented by means of small-signal equivalent circuits, when the proposed four-reactance wideband matching network is used for output matching to the subsequent stage. The effect of the size of the active devices, in achieving a desired gain, bandwidth, and output power, is investigated. The fabricated D-band amplifier is characterized on-wafer demonstrating a peak differential gain and output power of about 25 dB and 11 dBm, respectively, while utilizing a DC power of 262 mW from a 2.7 V supply. The 3-dB small-signal bandwidth of the PA spans from 100 to 180 GHz (limited by the measurement setup), making it the first SiGe-based PA to cover the entire D-band frequency range. The PA achieves a state-of-the-art differential gain-bandwidth product of around 1.4 THz and the highest GBW/PDCratio of 5.2 GHz/mW among all D-Band Si-based PAs.

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