Measurement Of Absorption Losses Of Optical Thin Film Components By Photothermal Deflection Spectroscopy

1987 ◽  
Author(s):  
M. Commandre ◽  
L. Bertrand ◽  
G. Albrand ◽  
E. Pelletier
Keyword(s):  
Thin Film ◽  
Optical Thin Film ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

Influence of ion beam parameters onto two-dimensional optical thin film thickness distributions deposited by ion beam sputtering

2019 ◽  
Vol 682 ◽  
pp. 109-120 ◽  
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Marco Jupé ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Ion Beam ◽  
Two Dimensional ◽  
Ion Beam Sputtering ◽  
Thin Film Thickness ◽  
Optical Thin Film ◽  
Beam Sputtering ◽  
Beam Parameters

Modeling and analysis of birefringence in magneto-optical thin film made by SiO2/ZrO2 doped with ferrite of cobalt

2010 ◽  
Vol 99 (3) ◽  
pp. 553-558 ◽  
Author(s):  
A. Hocini ◽  
T. Boumaza ◽  
M. Bouchemat ◽  
F. Choueikani ◽  
F. Royer ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Thin Film ◽  
Modeling And Analysis

scholarly journals Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
S. Ktifa ◽  
M. Ghrib ◽  
F. Saadallah ◽  
H. Ezzaouia ◽  
N. Yacoubi
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Porous Aluminum ◽  
Force Microscopy ◽  
Photothermal Deflection Spectroscopy ◽  
Atomic Force ◽  
Photothermal Deflection ◽  
Morphology Characterization

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.

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