Erbium-doped silicon and germanium nanostructured building blocks

This work addresses the validity of the local effective medium theory (EMT) in predicting the near-field radiative heat transfer between multilayered metamaterials, separated by a vacuum gap. Doped silicon and germanium are used to form the metallodielectric superlattice. Different configurations are considered by setting the layers adjacent to the vacuum spacer as metal–metal (MM), metal–dielectric (MD), or dielectric–dielectric (DD) (where M refers to metallic doped silicon and D refers to dielectric germanium). The calculation is based on fluctuational electrodynamics using the Green's function formulation. The cutoff wave vectors for surface plasmon polaritons (SPPs) and hyperbolic modes are evaluated. Combining the Bloch theory with the cutoff wave vector, the application condition of EMT in predicting near-field radiative heat transfer is presented quantitatively and is verified by exact calculations based on the multilayer formulation.

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Evaluation of erbium‐doped silicon for optoelectronic applications

Journal of Applied Physics ◽

10.1063/1.349306 ◽

1991 ◽

Vol 70 (6) ◽

pp. 3223-3228 ◽

Cited By ~ 95

Author(s):

Y. H. Xie ◽

E. A. Fitzgerald ◽

Y. J. Mii

Keyword(s):

Erbium Doped ◽

Doped Silicon ◽

Optoelectronic Applications

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Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

MRS Proceedings ◽

10.1557/proc-536-75 ◽

1998 ◽

Vol 536 ◽

Cited By ~ 1

Author(s):

Se-Young Seo ◽

Jung H. Shin ◽

Choochon Lee

Keyword(s):

Room Temperature ◽

Radiative Decay ◽

Silicon Oxide ◽

Silicon Nanoclusters ◽

Excitation Rate ◽

Carrier Recombination ◽

Erbium Doped ◽

Doped Silicon ◽

Almost All ◽

Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

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